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CDST-20-G

Description
SMD Switching Diodes
CategoryDiscrete semiconductor    diode   
File Size367KB,4 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
Download Datasheet Parametric View All

CDST-20-G Overview

SMD Switching Diodes

CDST-20-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Number of components1
Maximum operating temperature150 °C
Maximum output current0.2 A
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.05 µs
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SMD Switching Diodes
CDST-19-G/20-G
High Speed
RoHS Device
Features
- Fast switching diode.
- Surface mount package ideally for automatic
insertion.
- For general purpose switching applications.
- High conductance.
SOT-23
0.119 (3.00)
0.110 (2.80)
-
+
3
0.056 (1.40)
0.047 (1.20)
1
0.083 (2.10)
0.066 (1.70)
2
Mechanical data
- Case: SOT-23
- Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026.
- Weight: 0.008 gram.
0.020 (0.50)
0.012 (0.30)
0.041 (1.05)
0.035 (0.90)
0.006 (0.15)
0.003 (0.08)
0.103 (2.60)
0.086 (2.20)
0.006 (0.15) max
0.007 (0.20) min
Circuit Diagram
3
Dimensions in inches and (millimeters)
1
2
Maximum Rating
(at Ta=25°C unless otherwise noted)
Parameter
Non-Repetitive peak reverse voltage
DC blocking voltage
Average rectified output current
Power dissipation
Thermal resistance-Junction to ambient air
Junction temperature
Storage temperature range
Symbol
V
RM
V
R
I
O
P
D
R
θJA
T
J
T
STG
CDST-19-G
100
100
200
250
500
150
-65 ~ +150
CDST-20-G
150
150
Unit
V
V
mA
mW
O
C/W
O
C
C
O
Electrical Characteristics
(at T
A
=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
CDST-19-G
CDST-20-G
CDST-19-G
CDST-20-G
Symbol
V
BR
Test Conditions
I
R
=100uA
Min
100
150
Max
Unit
V
Reverse leakage current
I
R
V
R
=100V
V
R
=150V
I
F
=100mA
I
F
=200mA
V
R
=0V, f=1MH
Z
I
F
=I
R
=30mA, Irr=0.1
X
I
R
0.1
1
1.25
5
50
UA
Forward voltage
Junction capacitance
Reverse recovery time
V
F
C
J
t
rr
V
pF
nS
REV:B
Page 1
Company reserves the right to improve product design , functions and reliability without notice.
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