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BQ4011HMA-35

Description
Non-Volatile SRAM, 32KX8, 35ns, CMOS,
Categorystorage    storage   
File Size679KB,11 Pages
ManufacturerBenchmarq Microelectronics Inc
Download Datasheet Parametric Compare View All

BQ4011HMA-35 Overview

Non-Volatile SRAM, 32KX8, 35ns, CMOS,

BQ4011HMA-35 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBenchmarq Microelectronics Inc
Reach Compliance Codeunknown
Maximum access time35 ns
Other featuresPOWER SUPPLY WRITE PROTECTION
JESD-30 codeR-XDMA-T28
JESD-609 codee0
memory density262144 bit
Memory IC TypeNON-VOLATILE SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Output characteristics3-STATE
ExportableYES
Package body materialUNSPECIFIED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.004 A
Maximum slew rate0.125 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

BQ4011HMA-35 Related Products

BQ4011HMA-35 BQ4011HYMA-35 BQ4011HMA-45 BQ4011HYMA-45
Description Non-Volatile SRAM, 32KX8, 35ns, CMOS, Non-Volatile SRAM, 32KX8, 35ns, CMOS, Non-Volatile SRAM, 32KX8, 45ns, CMOS, Non-Volatile SRAM, 32KX8, 45ns, CMOS,
Is it Rohs certified? incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown
Maximum access time 35 ns 35 ns 45 ns 45 ns
Other features POWER SUPPLY WRITE PROTECTION POWER SUPPLY WRITE PROTECTION POWER SUPPLY WRITE PROTECTION POWER SUPPLY WRITE PROTECTION
JESD-30 code R-XDMA-T28 R-XDMA-T28 R-XDMA-T28 R-XDMA-T28
JESD-609 code e0 e0 e0 e0
memory density 262144 bit 262144 bit 262144 bit 262144 bit
Memory IC Type NON-VOLATILE SRAM NON-VOLATILE SRAM NON-VOLATILE SRAM NON-VOLATILE SRAM
memory width 8 8 8 8
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 28 28 28 28
word count 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 32KX8 32KX8 32KX8 32KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Exportable YES YES YES YES
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIP DIP DIP DIP
Encapsulate equivalent code DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.004 A 0.004 A 0.004 A 0.004 A
Maximum slew rate 0.125 mA 0.125 mA 0.125 mA 0.125 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.75 V 4.5 V 4.75 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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