GT60J323
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT60J323
Current Resonance Inverter Switching Application
•
•
•
•
•
•
Enhancement mode type
High speed : t
f
= 0.16
μs
(typ.) (I
C
= 60A)
Low saturation voltage: V
CE (sat)
= 1.9 V (typ.) (I
C
= 60A)
FRD included between emitter and collector
Fourth generation IGBT
TO-3P(LH) (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
Pulsed collector current
Diode forward current
Collector power
dissipation
Junction temperature
Storage temperature range
DC
Pulsed
@ Tc
=
100°C
@ Tc
=
25°C
@ Tc
=
100°C
@ Tc
=
25°C
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FP
P
C
T
j
T
stg
Rating
600
±25
33
60
120
30
120
68
170
150
−55
to 150
Unit
V
V
A
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R
th (j-c)
R
th (j-c)
Max
0.74
1.56
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Marking
Part No. (or abbreviation code)
TOSHIBA
Gate
Emitter
GT60J323
Lot No.
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01
GT60J323
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Diode forward voltage
Reverse recovery time
Symbol
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
r
t
on
t
f
t
off
V
F
t
rr
I
F
= 30 A, V
GE
= 0
I
F
= 30 A, di/dt =
−100
A/μs
Test Condition
V
GE
= ±25 V, V
CE
= 0
V
CE
= 600 V, V
GE
= 0
I
C
= 60 mA, V
CE
= 5 V
I
C
= 60 A, V
GE
= 15 V
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
Resistive Load
V
CC
= 300 V, I
C
= 60 A
V
GG
= ±15 V, R
G
= 30
Ω
(Note 1)
Min
―
―
3.0
―
―
―
―
―
―
―
―
Typ.
―
―
―
1.9
4800
0.17
0.23
0.16
0.41
1.4
0.1
Max
±500
1.0
6.0
2.5
―
―
―
0.26
―
2.0
0.2
V
µs
μs
Unit
nA
mA
V
V
pF
Note 1: Switching time measurement circuit and input/output waveforms
V
GE
0
R
G
0
V
CC
0
V
CE
t
d (off)
R
L
I
C
90%
90%
10%
90%
10%
t
f
t
off
10%
t
r
t
on
2
2006-11-01
GT60J323
I
C
– V
CE
120
Common emitter
Tc
= −40°C
100
15
120
Common emitter
Tc
=
25°C
100
I
C
– V
CE
15
20
80
10
8
7
(A)
20
80
8
7
Collector current IC
Collector current IC
(A)
60
40
10
60
40
20
VGE
=
6 V
VGE
=
6 V
20
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector-emitter voltage
VCE (V)
Collector-emitter voltage
VCE (V)
I
C
– V
CE
120
Common emitter
Tc
=
125°C
100
20
10
120
Common emitter
VCE
=
5 V
I
C
– V
GE
(A)
Collector current IC
15
7
60
Collector current IC
80
(A)
80
60
VGE
=
6 V
40
8
100
40
25
−40
Tc
=
125°C
20
20
0
0
1
2
3
4
5
0
0
2
4
6
8
10
Collector-emitter voltage
VCE (V)
Gate-emitter voltage
VGE (V)
V
CE (sat)
– Tc
3.2
IC
=
120 A
2.4
80
Collector-emitter saturation voltage
V
CE
(sat) (V)
60
1.6
30
10
0.8
Common emitter
VGE
=
15 V
0.0
−60
−20
20
60
100
140
Case temperature Tc (°C)
3
2006-11-01
GT60J323
V
CE,
V
GE
– Q
G
400
Common emitter
RL
=
5
Ω
Tc
=
25°C
20
30000
10000
C – V
CE
V
CE
(V)
V
GE
(V)
Collector-emitter voltage
Capacitance C
(pF)
300
15
5000
3000
1000
500
300
100
50
30
10
0.0
Common emitter
VGE
=
0
f
=
1 MHz
Tc
=
25°C
1
10
Cies
200
VCE
=
300 V
100
10
Gate-emitter voltage
Coes
100
5
200
Cres
0
0
80
160
240
0
320
100
1000
Gate charge Q
G
(nC)
Collector-emitter voltage V
CE
(V)
Switching Time – R
G
Common emitter
3 V
CC
=
300 V
IC
=
60 A
VGG
= ±15
V
1 Tc
=
25°C
0.5
0.3
5
10
5
toff
ton
3
Switching Time – I
C
Common emitter
VCC
=
300 V
RG
=
30
Ω
VGG
= ±15
V
Tc
=
25°C
toff
tf
0.1 t
on
0.05
0.03
tr
Switching time (μs)
Switching time (μs)
tr
tf
1
0.5
0.3
0.1
0.05
0.03
0.01
0
10
100
1000
0.01
0
10
20
30
40
50
60
70
Gate resistance
R
G
(Ω)
Collector current I
C
(A)
Safe Operating Area
3000
1000
500
300
IC max (pulsed)
*
100
50
30 IC max
(continuous)
Reverse Bias SOA
3000
Tj
≤
125°C
VGG
=
20 V
RG
=
10
Ω
*:
Single non-repetitive
pulse Tc
=
25°C
Curves must be derated
linearly with increases in
temperature.
1000
500
300
100
50
30
10
5
3
1
1
(A)
Collector current I
C
10 ms*
1 ms*
10
μs*
100
μs*
10
5 DC operation
3
1
1
10
100
1000
10000
Collector current I
C
(A)
10
100
1000
10000
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage V
CE
(V)
4
2006-11-01
GT60J323
I
C
max – Tc
Maximum DC collector current I
C
max (A)
Common
emitter
VGE
=
15 V
Transient thermal impedance r
th
(t) (°C/W)
70
60
50
40
30
20
10
0
25
10
3
r
th (t)
– t
w
Tc
=
25°C
10
2
10
1
Diode stage
10
0
IGBT stage
10
−
1
10
−
2
10
−
3
10
−
5
10
−
4
10
−
3
10
−
2
10
−
1
10
0
10
1
10
2
50
75
100
125
150
Case temperature
Tc
(°C)
Pulse width
t
w
(s)
I
F
– V
F
100
50
I
rr
, t
rr
– I
F
500
300
I
rr
(A)
Common emitter
VGE = 0
80
(A)
Peak reverse recovery current
Forward current I
F
60
10
trr
5
3
Irr
100
40
25
Tc = 125°C
−40
0
0
0.4
0.8
1.2
1.6
2.0
50
30
Common emitter
di/dt =
−100
A/μs
VGE = 0
Tc = 25°C
10
15
20
25
10
30
20
1
0
5
Forward voltage V
F
(V)
Forward current I
F
(A)
C
j
– V
R
1000
500
f
=
1 MHz
I
rr
, t
rr
– di/dt
(A)
200
10
Common emitter
IF = 30 A
Tc = 25°C
8
trr
Tc
=
25°C
C
j
(pF)
t
rr
Reverse recovery time
Junction capacitance
100
50
30
Peak reverse recovery current
Irr
300
(ns)
6
100
4
Irr
10
5
3
1
3
5
10
30
50
100
300 500
2
0
0
0
40
80
120
160
200
Reverse voltage
V
R
(V)
di/dt (A/μs)
5
2006-11-01
Reverse recovery time
t
rr
(ns)
30
PCB Design
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