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PF48F4040LVYTQ0

Description
Flash, 32MX16, 88ns, PBGA88, 8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88
Categorystorage    storage   
File Size1MB,112 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Environmental Compliance
Download Datasheet Parametric View All

PF48F4040LVYTQ0 Overview

Flash, 32MX16, 88ns, PBGA88, 8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88

PF48F4040LVYTQ0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIntel
Parts packaging codeBGA
package instruction8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88
Contacts88
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time88 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B88
JESD-609 codee1
length11 mm
memory density536870912 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level3
Number of functions1
Number of departments/size8, 510
Number of terminals88
word count33554432 words
character code32000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA88,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size16K,64K
Maximum standby current0.000005 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
switch bitNO
typeNOR TYPE
width8 mm
Intel StrataFlash
£
Wireless Memory
System (LV18/LV30 SCSP)
1024-Mbit LV Family
Datasheet
Product Features
Device Architecture
— Flash die density: 128-, 256-Mbit
— Top or Bottom flash parameter
configuration
Device Voltage
— Core: V
CC
= 1.8 V (Typ)
— I/O: V
CCQ
= 1.8 V or 3.0 V (Typ)
Device Common Performance
— Buffered EFP: 5
µs
/ Byte (Typ) per die
— Buffer Program: 7
µs
/ Byte (Typ) per
die
— Concurrent Buffered EFP: 6.4 Mbits
per second (4 dies)
Device Common Architecture
— Asymmetrical blocking structure
— 16-KWord parameter blocks (Top or
Bottom); 64-KWord main blocks
— Zero-latency block locking
— Absolute write protection with block
lock down using F-WP#
Device Packaging
— 88 balls (8 x 10 active ball matrix) for
LVQ device and 103 balls (9 x 12 ball
matrix) for LVX device
— Area: 8 x 11 mm to 11 x 11 mm
— Height: 1.2 mm to 1.4 mm
Code Segment Flash Performance
— 85 ns initial access at 1.8 V I/O
— 25 ns async page read at 1.8 V I/O
— 14 ns sync read (t
CHQV
) at 1.8 V I/O
— 54 MHz CLK at 1.8 V I/O
Data Segment Flash Performance
— 170 ns initial access at 1.8 V I/O
— 55 ns async page read at 1.8 V I/O
Code Segment Flash Architecture
— Hardware Read-While-Write/Erase
— Multiple 8-Mbit or 16-Mbit Partition Sizes
— 2-Kbit One-Time Programmable (OTP)
protection register
Data Segment Flash Architecture
— Software Read-While-Write/Erase
— Single Partition Size Die
Flash Software
— Intel
£
FDI, Intel
£
PSM, and Intel
£
VFM
— Common Flash Interface (CFI)
— Basic/Extended Command Set
Quality and Reliability
— Extended Temp:
25
°C
to +85
°C
— Minimum 100 K flash block erase cycle
— 0.13
µm
ETOX¥ VIII flash technology
The Intel StrataFlash
®
Wireless Memory System (LV18/LV30 SCSP) family offers a variety of
high performance code segment and large embedded data segment combination flash dies in
common package footprints and ballouts on 0.13 µm ETOX™ VIII flash technology. The code
segment flash features 1.8 V low-power operations with flexible multi-partitions, dual operation
Read-While-Write/Erase, asynchronous and synchronous reads at 54 MHz. The data segment flash
features 1.8 V low-power operations optimized for cost sensitive large embedded asynchronous
data application. The LV device integrates up to two code segment flash dies and two data segment
flash dies compatible with other LQ/LVQ or LX/LVX SCSP family ballout packages.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
253854-003
February 2004

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