MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AM
OUTLINE DRAWING
10 MAX
4
φ3.2±0.1
TYPE NAME
VOLTAGE
CLASS
Dimensions
in mm
0.5
∗
4 MAX
12 MIN
1.2±0.1
0.8
0.8
8 MAX
3.2±0.2
23.7±0.5
2.5 2.5
4.5 MAX
1.5 MIN
0.5
123
1.55±0.1
∗
Measurement point of
case temperature
• I
T (RMS)
........................................................................ 3A
• V
DRM
..............................................................400V/600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 30mA (15mA)
V6
APPLICATION
Contactless AC switches, light dimmer, electric blankets,
control of household equipment such as electric fan,
solenoid drivers, small motor control, other general
purpose control applications
10 MAX
24
1
2
3
34
1
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
TO-202
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=86°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
1.6
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V1.
Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
case
V4 V5
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=4.5A, Instantaneous measurement
Min.
—
—
—
—
—
—
—
—
0.2
—
V3
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
V6
30
V6
30
V6
—
10
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4.
Case temperature is measured at the T
2
terminal 1.5mm away from the molded case.
V5.
The contact thermal resistance R
th (c-f)
in case of greasing is 3°C/W.
V6.
High sensitivity (I
GT
≤15mA)
is also available. (I
GT
item
1)
(dv/dt)
c
Min.
Unit
Test conditions
Voltage
class
V
DRM
(V)
Commutating voltage and current waveforms
(inductive load)
8
400
1. Junction temperature
T
j
=125°C
5
V/µs
2. Rate of decay of on-state commutating current
(di/dt)
c
=–1.5A/ms
3. Peak off-state voltage
V
D
=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
12
600
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
40
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
T
C
= 25°C
35
30
25
20
15
10
5
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
0
7
5
3
2
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
TYPICAL EXAMPLE
I
RGT III
GATE VOLTAGE (V)
10
1
7
5
3
2
10
0
7
5
3
2
P
G(AV)
= 0.3W
V
GT
I
GM
=
0.5A
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
2
7
5
3
2
P
GM
= 3W
I
RGT I
10
2
I
FGT I,
I
RGT I
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
I
FGT I,
I
RGT III
V
GD
= 0.2V
10
–1
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
10
2
7 JUNCTION TO AMBIENT
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TO CASE
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
130
120
CASE TEMPERATURE (°C)
5.0
4.5
4.0
360°
3.5 CONDUCTION
3.0 RESISTIVE,
INDUCTIVE
2.5 LOADS
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
110
100
90
80
70
60 360°
CONDUCTION
50 RESISTIVE,
40 INDUCTIVE
LOADS
30
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
130
NATURAL CONVECTION
120
ALL FINS ARE BLACK PAINTED
IRON AND GREASED
110
CURVES APPLY REGARDLESS
100
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
90
LOADS
80
70
60
50
40
30
0
50 50 t1.2
30 30 t1.2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE
100
LOADS
80
60
40
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
100 (%)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
10
1
7
5
3
2
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
+
T
2
, G
+
TYPICAL
½
– –
T
2
, G EXAMPLE
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION
LACHING CURRENT (mA)
T
2
, G
TYPICAL
EXAMPLE
+
–
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
III QUADRANT
I QUADRANT
T
j
= 125°C
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
COMMUTATION CHARACTERISTICS
10
2
VOLTAGE WAVEFORM
TYPICAL
7
t
EXAMPLE
5 (dv/dt)
C
V
D
T
j
= 125°C
4
CURRENT WAVEFORM
I
T
= 4A
3
(di/dt)
C
τ
= 500µs
I
T
2
V
D
= 200V
τ
t
f = 3Hz
10
1
7
I QUADRANT
5
4
III QUADRANT
3
MINIMUM
2
CHARAC-
10
0 0
10
TERISTICS
VALUE
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
2 3 4 5 7 10
1
2 3 4 5 7 10
2
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
100 (%)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
TYPICAL EXAMPLE
I
RGT III
I
RGT I
I
FGT I
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE
3
Feb.1999
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