KMM366S824BT-G8 datasheet, PDF

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KMM366S824BT-G8: DescriptionSynchronous DRAM Module, 8MX64, 6ns, CMOS; Categorystorage storage; File Size432KB，10 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KMM366S824BT-G8 Overview

Synchronous DRAM Module, 8MX64, 6ns, CMOS

KMM366S824BT-G8 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
package instruction	DIMM, DIMM168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	35.052 mm
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	1.2 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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KMM366S824BT-G8 Related Products

	KMM366S824BT-G8	KMM366S824BT-GH	KMM366S824BT-GL
Description	Synchronous DRAM Module, 8MX64, 6ns, CMOS	Synchronous DRAM Module, 8MX64, 6ns, CMOS	Synchronous DRAM Module, 8MX64, 6ns, CMOS
Maker	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	125 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	168	168	168
word count	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	8MX64	8MX64	8MX64
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096
Maximum seat height	35.052 mm	35.052 mm	35.052 mm
self refresh	YES	YES	YES
Maximum standby current	0.008 A	0.008 A	0.008 A
Maximum slew rate	1.2 mA	1.2 mA	1.2 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL

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