RN2101F datasheet, PDF - EEWORLD Datasheet

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RN2101F: DescriptionSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size548KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2101F Overview

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2101F Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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RN2101∼RN2106

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101, RN2102, RN2103,

RN2104, RN2105, RN2106

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Built-in bias resistors

Simplified circuit design

Fewer parts and simplified manufacturing process

Complementary to RN1101~RN1106

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2101

RN2102

RN2103

RN2104

RN2105

RN2106

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2101~2106

RN2101~2104

RN2105, 2106

Symbol

CBO

CEO

EBO

stg

Rating

−50

−10

−5

−100

100

150

−55~150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

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