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RN49A5

Description
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size176KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

RN49A5 Overview

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN49A5 Parametric

Parameter NameAttribute value
package instruction2-2J1A, ULTRA SUPERMINI, US6, 6 PIN
Contacts6
Reach Compliance Codeunknow
Other featuresBUILT IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
RN49A5
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN49A5
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Two devices are incorporated into an Ultra-Super-Mini (6-pin) package.
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
Diverse resistance values are available suited to a range of different
circuit designs.
Unit: mm
Equivalent Circuit and Bias Resister Values
Q1
R1: 10 kΩ, R2 : 47 kΩ
Q2
R1: 2.2 kΩ, R2: 10 kΩ
Q1: RN1107F
Equivalent
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg (typ.)
2-2J1A
Q2: RN2327A Equivalent
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
6
100
Unit
V
V
V
mA
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−15
−12
−6
−500
Unit
V
V
V
mA
1
2007-11-01
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