TIM1414-8 datasheet, PDF - EEWORLD Datasheet

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TIM1414-8: DescriptionMICROWAVE POWER GaAs FET; CategoryDiscrete semiconductor The transistor; File Size133KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TIM1414-8 Overview

MICROWAVE POWER GaAs FET

TIM1414-8 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	2-11C1B, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
Maximum drain current (ID)	10.4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	KU BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM1414-8L

TECHNICAL DATA

FEATURES

LOW INTERMODULATION DISTORTION

IM3=-45 dBc at Pout= 28.0dBm

Single Carrier Level

HIGH POWER

P1dB=39.5 dBm at 14.0 GHz to 14.5 GHz

HIGH GAIN

G1dB=5.0 dB at 14.0 GHz to 14.5 GHz

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

RF PERFORMANCE SPECIFICATIONS

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

Power Added Efficiency

Order Intermodulation

Distortion

Drain Current

Channel Temperature Rise

SYMBOL

1dB

DS1

( Ta= 25

C )

UNIT

dBm

dBc

MIN.

38.5

4.0

⎯

-42

⎯

TYP. MAX.

39.5

⎯

5.0

3.4

-45

3.4

⎯

4.4

⎯

4.4

CONDITIONS

VDS= 9V

f= 14.0 to 14.5GHz

add

IM3

IDS2

ΔTch

Two-Tone Test

Po=28. 0dBm

(Single Carrier Level)

(VDS X IDS + Pin – P1dB)

X Rth(c-c)

Recommended gate resistance(Rg) : Rg= 150

Ω

(MAX.)

ELECTRICAL CHARACTERISTICS ( Ta= 25°C )

CHARACTERISTICS

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

SYMBOL

GSoff

DSS

GSO

th(c-c)

CONDITIONS

= 3V

= 4.0 A

= 120mA

= 0V

= -120μA

Channel to Case

UNIT

C/W

MIN.

⎯

-2.0

⎯

-5

⎯

TYP.

2400

-3.5

8.0

⎯

1.6

MAX.

⎯

-5.0

⎯

2.5

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jul. 2006

TIM1414-8 Related Products

	TIM1414-8	TIM1414-8L
Description	MICROWAVE POWER GaAs FET	MICROWAVE POWER GaAs FET
Is it Rohs certified?	incompatible	conform to
package instruction	2-11C1B, 3 PIN	FLANGE MOUNT, R-CDFM-F2
Contacts	3	2
Reach Compliance Code	unknow	compli
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	15 V	15 V
Maximum drain current (ID)	10.4 A	10.4 A
FET technology	METAL-OXIDE SEMICONDUCTOR	JUNCTION
highest frequency band	KU BAND	KU BAND
JESD-30 code	R-CDFM-F2	R-CDFM-F2
Number of components	1	1
Number of terminals	2	2
Operating mode	DEPLETION MODE	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	240	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Base Number Matches	1	1

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