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US1B-E3

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
CategoryDiscrete semiconductor    diode   
File Size107KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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US1B-E3 Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC

US1B-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
at I
F
T
J
max.
Package
Diode variations
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
30 A
50 ns, 75 ns
1.0 V, 1.7 V
150 °C
DO-214AC (SMA)
Single die
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, automotive grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 110 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
US1A
UA
50
35
50
US1B
UB
100
70
100
US1D
UD
200
140
200
US1G
UG
400
280
400
1.0
30
-55 to +150
US1J
UJ
600
420
600
US1K
UK
800
560
800
US1M
UM
1000
700
1000
V
V
V
A
A
°C
UNIT
Revision: 30-Oct-13
Document Number: 88768
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC

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