SB10150 datasheet, PDF - EEWORLD Datasheet

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SB10150: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, DO-201AD, LEAD FREE PACKAGE-2; CategoryDiscrete semiconductor diode; File Size447KB，4 Pages; ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.; Environmental Compliance

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SB10150 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, DO-201AD, LEAD FREE PACKAGE-2

SB10150 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction	LEAD FREE PACKAGE-2
Reach Compliance Code	compliant
Other features	FREE WHEELING DIODE
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-XALF-W2
Maximum non-repetitive peak forward current	200 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	10 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	150 V
Maximum reverse current	1000 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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SB10150

Technical Data

Data Sheet N0884, Rev. B

SB10150 SCHOTTKY RECTIFIER

Features



Schottky Barrier Chip

Guard Ring Die Construction for Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency Inverters,

Free Wheeling, and Polarity Protection Applications

This is a Pb − Free Device

All SMC parts are traceable to the wafer lot

Additional testing can be offered upon request

DO-201AD



Circuit Diagram

Applications



Switching power supply

Converters

Free-Wheeling diodes

Reverse battery protection

Disk drives

Battery charging

Maximum Ratings:

Characteristics

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

Peak One Cycle Non-Repetitive Surge

Current

Symbol

RRM

RWM

F (AV)

FSM

Condition

50% duty cycle @T

=75°C,

rectangular wave form

8.3 ms, half Sine pulse, T

=25°C

Max.

150

200

Units

Electrical Characteristics:

Characteristics

Forward Voltage Drop*

Reverse Current*

Junction Capacitance

* Pulse width < 300 µs, duty cycle < 2%

Symbol

Condition

@ 10A, Pulse, T

= 25 °C

@ 10A, Pulse, T

= 125 °C

= Rated V

, Pulse, T

= 25 °C

= Rated V

, Pulse, T

= 125 °C

= 5V, T

= 25

C,

SIG

= 1MHz

Typ.

0.83

0.70

0.0004

0.2

180

Max.

1.05

0.90

7.0

300

Units



China - Germany - Korea - Singapore - United States



http://www.smc-diodes.com - sales@ smc-diodes.com



SB10150

Technical Data

Data Sheet N0884, Rev. B

Carrier Tape Specification DO-201AD

Millimeters

Min.

9.50

50.9

5.60

SYMBOL

IL1-L2I

Max.

10.50

53.9

1.20

6.40

0.80

1.0

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department

for the latest version of the datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,

medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by

means of users’ fail-safe precautions or other arrangement .

3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any

other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes

no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or

circuits described in the datasheets.

4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary

damage resulting from use at a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing)

Co., Ltd.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC -

Sangdest Microelectronics (Nanjing) Co., Ltd.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder

maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When

exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..



China - Germany - Korea - Singapore - United States



http://www.smc-diodes.com - sales@ smc-diodes.com



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