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BAV116-13

Description
Rectifier Diode, 1 Element, 0.215A, 130V V(RRM), Silicon, PLASTIC, SOD-123, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size70KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

BAV116-13 Overview

Rectifier Diode, 1 Element, 0.215A, 130V V(RRM), Silicon, PLASTIC, SOD-123, 2 PIN

BAV116-13 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeSOD
package instructionR-PDSO-G2
Contacts2
Manufacturer packaging codeSOD-123
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.215 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage130 V
Maximum reverse recovery time3 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAV116W
SURFACE MOUNT LOW LEAKAGE DIODE
Features
NEW PRODUCT
·
·
Surface Mount Package Ideally Suited for
Automatic Insertion
Very Low Leakage Current
Dim
A
H
G
A
B
C
E
D
SOD-123
Min
3.55
2.55
1.40
0.25
Max
3.85
2.85
1.70
1.35
0.10
Mechanical Data
·
·
·
·
·
·
·
Case: SOD-123, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202, Method
208
Polarity: Cathode Band
Marking: Date Code and Type Code, See Page 2
Type Code: 50
Weight: 0.01 grams (approx.)
J
B
C
D
E
G
H
J
a
a
0.55 Typical
0.11 Typical
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
I
FSM
P
d
R
qJA
T
j
, T
STG
BAV116W
130
90
215
500
4.0
1.0
0.5
250
500
-65 to +150
Unit
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
Min
130
130
Typ
¾
¾
¾
Max
¾
¾
0.90
1.0
1.1
1.25
1.0
5.0
80
5
3.0
Unit
V
Test Condition
I
R
= 100mA
I
R
= 100mA, T
j
=125°C
I
F
= 1.0mA, T
j
= 25°C
I
F
= 10mA, T
j
= 25°C
I
F
= 50mA, T
j
= 25°C
I
F
= 150mA, T
j
= 25°C
I
F
= 10mA, T
j
= 125°
V
R
= 75V, T
j
= 25°C
V
R
= 75V, T
j
= 125°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
Forward Voltage (Note 1)
V
FM
¾
V
Leakage Current (Note 1)
Total Capacitance
Reverse Recovery Time
Notes:
I
RM
C
T
t
rr
¾
¾
¾
¾
2.4
¾
nA
nA
pF
ms
1. Short duration pulse to minimize self-heating effect.
2. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
DS30291 Rev. 2 - 2
1 of 2
BAV116W

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