2N4393G datasheet, PDF - EEWORLD Datasheet

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2N4393G: DescriptionSmall Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA; CategoryDiscrete semiconductor The transistor; File Size60KB，2 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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2N4393G Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA

2N4393G Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
Shell connection	GATE
Configuration	SINGLE
Maximum drain-source on-resistance	100 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	3.5 pF
JEDEC-95 code	TO-206AA
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	200 °C
Minimum operating temperature	-55 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	1.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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	2N4393G	2N4392G-1	2N4393G-1	2N4393G-2	2N4391G-1	2N4392G	2N4392G-2	2N4391G-2	2N4391G
Description	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknown	unknow	unknow	unknow	unknown	unknow	unknow	unknow
Shell connection	GATE	GATE	GATE	GATE	GATE	GATE	GATE	GATE	GATE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum drain-source on-resistance	100 Ω	60 Ω	100 Ω	100 Ω	30 Ω	60 Ω	60 Ω	30 Ω	30 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF
JEDEC-95 code	TO-206AA	TO-206AA	TO-206AA	TO-206AA	TO-206AA	TO-206AA	TO-206AA	TO-206AA	TO-206AA
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	-	1	1	1	-	1	1	1

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