Power Field-Effect Transistor, 39A I(D), 600V, 0.17ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | TT Electronics plc |
| package instruction | FLATPACK, R-MDFP-F10 |
| Reach Compliance Code | compliant |
| Minimum drain-source breakdown voltage | 600 V |
| Maximum drain current (ID) | 39 A |
| Maximum drain-source on-resistance | 0.17 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-MDFP-F10 |
| Number of terminals | 10 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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