Advance Technical Information
High Voltage
IGBT with Diode
Electrically Isolated Tab
IXGR 32N170AH1
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700 V
=
26 A
= 5.2 V
=
50 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
F90
I
CM
SSOA
(RBSOA)
t
SC
P
C
T
J
T
JM
T
stg
F
C
V
ISOL
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 5Ω
Clamped inductive load
T
J
= 125°C, V
CE
= 1200 V; V
GE
= 15 V, R
G
= 10Ω
T
C
= 25°C
Maximum Ratings
1700
1700
±20
±30
26
17
14
200
I
CM
= 70
@ 0.8 V
CES
10
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
µs
W
°C
°C
°C
N/lb
~V
°C
5
g
ISOPLUS247 (IXGR)
E153432
G
C
E
ISOLATED TAB
C = Collector,
G = Gate,
E = Emitter
Features
Electrically Isolated tab
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Mounting force with clamp
50/60 Hz, 1 minute
22...130/5...30
2500
300
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
min. typ. max.
1700
3.0
Note 1
T
J
= 125°C
5.0
500
8
±100
T
J
= 125°C
4.2
4.8
5.2
V
V
µA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1mA, V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
© 2004 IXYS All rights reserved
DS99233(11/04)
IXGR
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
min. typ. max.
25
33
3700
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
180
44
155
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V
R
G
= 2.7
Ω,
V
CE
= 0.8 V
CES
Note 3
30
51
46
57
270
50
1.5
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V
R
G
= 2.7
Ω,
V
CE
= 0.8 V
CES
Note 3
48
42
2.5
300
70
2.4
500
100
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
32N170AH1
ISOPLUS247 Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C25
; V
CE
= 10 V
Note 2
3.0 mJ
ns
ns
mJ
ns
ns
mJ
0.65 K/W
K/W
0.15
See IXGX32N170AH1 for
charcteristic curves
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
I
F
= 20A, V
GE
= 0 V, Note 2
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.7
50
150
V
A
ns
1.5 K/W
I
F
= 50A, V
GE
= 0 V, -di
F
/dt = 800 A/µs
V
R
= 600 V
Notes: 1.
2.
3.
4.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
Switching times may increase for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
.
See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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