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BD909

Description
Bipolar Transistors;NPN;15A;80V;TO-220
CategoryDiscrete semiconductor   
File Size211KB,2 Pages
ManufacturerInchange Semiconductor
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BD909 Overview

Bipolar Transistors;NPN;15A;80V;TO-220

BD909 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)90 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max3 V
isc
Silicon NPN Power Transistor
DESCRIPTION
·DC
Current Gain -
: h
FE
= 40(Min.)@ I
C
=
0.5A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 80V(Min)
·Complement
to Type BD910
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
80
80
5
15
20
5
90
150
-65~150
UNIT
V
V
V
A
A
A
W
BD909
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.38
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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