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BU931P

Description
Bipolar Transistors;NPN;15A;400V;TO-3PN
CategoryDiscrete semiconductor   
File Size216KB,2 Pages
ManufacturerInchange Semiconductor
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BU931P Overview

Bipolar Transistors;NPN;15A;400V;TO-3PN

BU931P Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistor
BU931P
DESCRIPTION
·High
Voltage
·DARLINGTON
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High
ruggedness electronic ignitions
·High
voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-peak
Base Current
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
500
400
5
15
30
1
5
135
175
-65~175
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.1
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
Please ignore the points
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