UZDT758 datasheet, PDF - EEWORLD Datasheet

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UZDT758: DescriptionPower Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size51KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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UZDT758 Overview

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

UZDT758 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SM-8, 8 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	400 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power consumption environment	2.75 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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SM-8 DUAL PNP MEDIUM POWER

TRANSISTORS

ISSUE 1 - NOVEMBER 1995

ZDT758

PARTMARKING DETAIL T758

SM-8

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

stg

VALUE

-400

-5

-1

-0.5

-55 to +150

UNIT

°C

THERMAL CHARACTERISTICS

PARAMETER

Total Power Dissipation at T

amb

= 25°C*

Any single die on

Both die on equally

Derate above 25°C*

Any single die on

Both die on equally

Thermal Resistance - Junction to Ambient*

Any single die on

Both die on equally

SYMBOL

tot

VALUE

2.25

2.75

55.6

45.5

UNIT

mW/ °C

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

3 - 354

UZDT758 Related Products

	UZDT758
Description	Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SM-8, 8 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	400 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power consumption environment	2.75 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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