Power Field-Effect Transistor, 3A I(D), 150V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Objectid | 1404796402 |
| Parts packaging code | TO-220F |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| compound_id | 10912823 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 150 V |
| Maximum drain current (ID) | 3 A |
| Maximum drain-source on-resistance | 2.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |
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