2SA1044 datasheet, PDF - EEWORLD Datasheet

2SA1044: DescriptionPower Bipolar Transistor, 30A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size218KB，1 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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2SA1044 Overview

Power Bipolar Transistor, 30A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin

Parameter Name	Attribute value
Objectid	1414420885
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RING EMITTER TRANSISTOR
Shell connection	COLLECTOR
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	70 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	150 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Maximum off time (toff)	1800 ns
VCEsat-Max	1.5 V

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