®
X02xxxA
SENSITIVE GATE SCR
FEATURES
I
T(RMS)
= 1.25A
V
DRM
= 200V to 800V
Low I
GT
< 200
µA
K
G
A
DESCRIPTION
The X02xxxA series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where low gate sensitivity is required.
TO92
(Plastic)
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
T(AV)
I
TSM
Parameter
RMS on-state current
(180° conduction angle)
Mean on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
(T
j
initial = 25°C )
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 10 mA
di
G
/dt = 0.1 A/µs.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
2mm from case
Tl= 60°C
Tl= 60°C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Value
1.25
0.8
25
22.5
2.5
30
- 40, + 150
- 40, + 125
260
A
2
s
A/µs
°C
°C
Unit
A
A
A
I
2
t
dI/dt
T
stg
T
j
Tl
Symbol
V
DRM
V
RRM
January 1995
Parameter
B
Repetitive peak off-state voltage
T
j
= 125°C R
GK
= 1KΩ
200
Voltage
D
400
M
600
N
800
Unit
V
1/5
X02xxxA
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-l)
Junction to ambient
Junction to leads for DC
Parameter
Value
150
60
Unit
°C/W
°C/W
GATE CHARACTERISTICS
(maximum values)
P
G (AV)
= 0.2 W P
GM
= 3 W (tp = 20
µs)
ELECTRICAL CHARACTERISTICS
Symbol
I
GT
Test Conditions
02
V
D
=12V (DC) R
L
=140Ω
Tj= 25°C
MIN
MAX
V
GT
V
GD
V
RGM
tgd
I
H
I
L
V
TM
I
DRM
I
RRM
dV/dt
tq
V
D
=12V (DC) R
L
=140Ω
V
D
=V
DRM
R
L
=3.3kΩ
R
GK
= 1 KΩ
I
RG
=10µA
V
D
=V
DRM
I
TM
= 3 x I
T(AV
)
dI
G
/dt = 0.1A/µs I
G
= 10mA
I
T
= 50mA R
GK
= 1 KΩ
I
G
=1mA R
GK
= 1 KΩ
I
TM
= 2.5A tp= 380µs
V
D
= V
DRM
R
GK
= 1 KΩ
V
R
= V
RRM
V
D
=67%V
DRM
R
GK
= 1 KΩ
I
TM
= 3 x I
T(AV
) V
R
=35V
dI/dt=10A/µs tp=100µs
dV/dt=2V/µs
V
D
= 67%V
DRM
R
GK
= 1 KΩ
Tj= 25°C
Tj= 125°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 110°C
Tj= 110°C
Tj= 110°C
MAX
MIN
MIN
TYP
MAX
MAX
MAX
MAX
MAX
TYP
MAX
15
200
Sensitivity
03
20
200
0.8
0.1
8
0.5
5
6
1.45
5
200
20
100
15
05
20
50
V
V
V
µs
mA
mA
V
µA
µA
V/µs
µs
µA
Unit
I
GM
= 1.2 A (tp = 20
µs)
ORDERING INFORMATION
X
SCR TOP GLASS
CURRENT
2/5
02
03
SENSITIVITY
M
A
PACKAGE :
A = TO92
VOLTAGE
®
X02xxxA
Fig.1 :
Maximum average power dissipation ver-
sus average on-state current.
Fig.2 :
Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tlead).
P (W)
P (W)
Tlead (
o
C)
1.2
360
O
1.2
Rth(j-l)
DC
= 180
= 120
= 90
o
o
o
-50
1.0
0.8
0.6
0.4
0.2
0.0
0
= 30
o
= 60
o
1.0
-70
0.8
0.6
0.4
0.2
-110
Tamb ( C)
o
Rth(j-a)
-90
I T(AV)(A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
0.0
0
20
40
60
80
100
120
140
Fig.3 :
Average on-state current versus lead tem-
perature.
I T(AV) (A)
Fig.4 :
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.00
1.4
1.2
1.0
0.8
= 180
o
DC
0.10
0.6
0.4
0.2
0.0
0
Tlead ( C)
o
tp (s)
10 20 30 40 50 60 70 80 90 100 110 120 130
0.01
1E-3
1E-2
1E-1
1 E+0
1 E+1
1E +2 5 E+2
Fig.5 :
Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]
Ih[Tj]
o
Ih[Tj=25 C]
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
25
Tj initial = 25 C
o
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40
-20
Ih
Tj(
o
C)
20
15
Igt
10
5
Number of cycles
20
40
60
80
100
120 140
0
0
1
10
100
100 0
3/5
®
X02xxxA
Fig.7 :
Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
≤
10ms, and
corresponding value of I
2
t.
I TSM (A). I
2
t (A
2
s)
Tj initial = 25
o
C
Fig.8 :
On-state characteristics (maximum values).
100
I TM (A)
100
Tj initial
o
25 C
I TSM
10
Tj max
10
1
I
2
t
Tj max
Vto =1.05V
Rt =0.150
tp(ms)
VTM (V)
1
1
10
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4/5
®
X02xxxA
PACKAGE MECHANICAL DATA
TO92 (Plastic)
DIMENSIONS
Millimeters
Inches
Typ.
a
B
C
REF.
A
Min. Max. Typ.
0.053
4.7
Min.
Max.
0.185
A
B
C
D
1.35
2.54
4.4
12.7
3.7
0.45
4.8
0.100
0.173 0.189
0.500
0.146
0.017
F
D
E
E
F
a
Marking : Type number
Weight : 0.2 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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®
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