SMD Glass Passivated Bridge Rectifiers
DF005S-G Thru. DF10S-G
Reverse Voltage: 50 to 1000V
Forward Current: 1.0A
RoHS Device
Features
-Rating to 1000V PRV
-Ideal for printed circuit board
-Low forward voltage drop,high current capability
-Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
-Lead tin Pb/Sn copper
-The plastic material has UL flammability
classification 94V-0
~
-
0.205(5.2)
0.197(5.0)
0.335(8.50)
0.307(7.80)
DFS
+
0.031(0.8)
0.023(0.6)
0.256(6.5)
0.244(6.2)
~
0.406(10.3)
0.394(10.0)
0.047(1.20)
0.037(0.95)
0.014(0.35)
0.008(0.20)
Mechanical Data
-Polarit:As marked on Body
-Weight: 0.34 grams
-Mounting position:Any
0.063(1.6)
0.055(1.4)
0.323(8.2)
0.315(8.0)
0.102(2.6)
0.089(2.2)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum Reverse Peak Repetitive Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current @T
A
=40°C
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
I t Rating for Fusing (t＜8.3ms)
Maximum Forward Voltage at 1.0A DC
@T
J
=25°C
Maximum Reverse Current
At Rated DC Blocking Voltage @T
J
=125°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
2
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
DF005S-G DF01S-G
50
35
50
100
70
100
DF02S-G
200
140
200
DF04S-G
400
280
400
1.0
DF06S-G
600
420
600
DF08S-G
800
560
800
DF10S-G
1000
700
1000
Unit
V
V
V
A
I
FSM
2
30
10.4
1.1
10
500
25
40
-55 ~ +150
-55 ~ +150
A
A
2
s
V
μA
pF
°C/W
°C
°C
I t
V
F
I
R
C
J
R
θJA
T
J
T
STG
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V.
2. Unit mounted on P.C.B with 0.51"×0.51" (13×13mm) copper pads.
REV: E
QW-BBR03
Page 1
Comchip Technology CO., LTD.
SMD Glass Passivated Bridge Rectifiers
Rating and Characteristics Curves (DF005S-G Thru. DF10S-G)
Fig.1 - Forward Current Derating Curve
1.0
Fig.2 - Maximum Non-repetitive Surge Current
40
0.8
Peak Forward Surge Current, (A)
Average Forward Current, (A)
30
0.6
20
0.4
10
Single half sine wave
(JEDEC method)
0.2
Mounted on PC board, single
phase half wave, 60Hz,
resistive or inductive load
0
0
50
100
150
0
1
10
100
Ambient Temperature, (°C)
Number Of Cycle At 60Hz
Fig.3 - Typical Junction Capacitance
100
Fig.4 - Typical Forward Characteristics
10
Instantaneous Forward Current, (A)
T
J
=25°C
Pulse width: 300us
2% duty cycle
Capacitance, (pF)
1.0
10
0.1
T
J
=25°C
f=1MHz
1
0.1
1
10
100
0.01
0
0.2
0.4 0.6
0.8
1.0
1.2 1.4
1.6 1.8
Reverse Voltage, (V)
Instantaneous Forward Voltage, (V)
Fig.5 - Typical Reverse Characteristics
Instantaneous Reverse Current, (μA)
100
T
J
=125°C
10
1.0
T
J
=25°C
0.1
0.01
0
20
40
60
80
100
120
140
Percent of Peak Reverse Voltage, (%)
REV: E
QW-BBR03
Page 2
Comchip Technology CO., LTD.
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