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BC547BJ05Z

Description
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size43KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

BC547BJ05Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

BC547BJ05Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
BC546/547/548/549/550
BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, V
CEO
=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
1
TO-92
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BC546
: BC547/550
: BC548/549
Value
80
50
30
65
45
30
6
5
100
500
150
-65 ~ 150
Units
V
V
V
V
V
V
V
V
mA
mW
°C
°C
V
CEO
Collector-Emitter Voltage : BC546
: BC547/550
: BC548/549
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
: BC546/547
: BC548/549/550
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
C
ib
NF
Parameter
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
: BC546/547/548
: BC549/550
: BC549
: BC550
Test Condition
V
CB
=30V, I
E
=0
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
V
CE
=5V, I
C
=200µA
f=1KHz, R
G
=2KΩ
V
CE
=5V, I
C
=200µA
R
G
=2KΩ, f=30~15000MHz
580
Min.
110
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
10
4
4
3
6
700
720
Typ.
Max.
15
800
250
600
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB
Units
nA
h
FE
Classification
Classification
h
FE
©2001 Fairchild Semiconductor Corporation
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
Rev. A1, June 2001
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