BUZ171 datasheet, PDF - EEWORLD Datasheet

BUZ171: DescriptionPower Field-Effect Transistor, 7A I(D), 50V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size156KB，1 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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BUZ171 Overview

Power Field-Effect Transistor, 7A I(D), 50V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Parameter Name	Attribute value
Maker	Vishay
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	230 pF
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	40 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Maximum off time (toff)	165 ns
Maximum opening time (tons)	125 ns

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