BA782 and BA783
Bandswitching Diodes
SOD-123
.022 (0.55)
Cathode Band
Mounting Pad Layout
.152 (3.85)
.140 (3.55)
.112 (2.85)
.100 (2.55)
Top View
0.094 (2.40)
0.055 (1.40)
0.055 (1.40)
.010 (0.25)
min.
Features
• Silicon Epitaxial Planar Diode Switches
• For electric bandswitching in radio and TV tuners
in the frequency range of 50...1000 MHz. The
dynamic forward resistance is constant and very
small over a wide range of frequency and forward
current. The reverse capacitance is also small and
largely independent of the reverse voltage.
• These diodes are also available in SOD-323 case
with the type designations BA782S and BA783S.
.006 (0.15)
max.
.004 (0.1)
max.
.067 (1.70)
.055 (1.40)
.053 (1.35)
max.
Dimensions in inches
and (millimeters)
Mechanical Data
Case:
SOD-123 plastic case
Weight:
approximately 0.01g
Cathode Band Color:
Blue
Packaging Codes/Options:
D3/10K per 13” reel (8mm tape), 30K/box
D4/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Reverse Voltage
Forward Continuous Current at T
amb
= 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
T
j
T
S
Value
35
100
125
–55 to +125
Unit
V
mA
°C
°C
5/8/00
BA782 and BA783
Bandswitching Diodes
Electrical Characteristics
Parameter
Forward Voltage
Leakage Current
BA782
BA783
BA782
BA783
Capacitance
Series Inductance across Case
BA782
BA783
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
V
F
I
R
Test Condition
I
F
= 100mA
V
R
= 20V
f = 50...1000MHz, I
F
= 3mA
Min
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
2.5
Max
1
50
0.7
1.2
0.5
0.9
1.5
1.25
1.2
—
Unit
V
nA
Ω
Dynamic Forward Resistance
r
f
f = 50...1000MHz, I
F
= 10mA
V
R
= 1V, f = 1MHz
C
tot
L
S
V
R
= 3V, f = 1MHz
—
pF
nH
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
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