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BC548BDWP

Description
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, 0.015 X 0.015 INCH, G1, DIE-2
CategoryDiscrete semiconductor    The transistor   
File Size45KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

BC548BDWP Overview

Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, 0.015 X 0.015 INCH, G1, DIE-2

BC548BDWP Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeDIE
package instructionUNCASED CHIP, S-XUUC-N2
Contacts2
Reach Compliance Codeunknown
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeS-XUUC-N2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)225 MHz

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