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BU526/4

Description
Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size134KB,2 Pages
ManufacturerBaneasa SA
Download Datasheet Parametric View All

BU526/4 Overview

Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, Metal, 2 Pin

BU526/4 Parametric

Parameter NameAttribute value
MakerBaneasa SA
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
ConfigurationSINGLE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
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