SKiiP 1213GB171-3DL
I. Power section 3 * SKiiP413GB171CT per phase
Absolute maximum ratings
Symbol
Conditions
1)
Values
1700
1200
±
20
1200 (900)
1200 (900)
12960
840
-40...+150 (125)
4000
3 * 500
Units
V
V
V
A
A
A
2
kA s
°C
V
A
IGBT
V
CES
V
CC
Operating DC link voltage
V
GES
I
C
T
heat sink
= 25 (70) °C
Inverse diode
I
F
T
heat sink
= 25 (70) °C
I
FSM
T
j
= 150 °C, t
p
= 10ms; sin
2
I t (Diode) Diode, T
j
= 150 °C, 10ms
T
j
, (T
stg
)
V
isol
AC, 1min.
3)
I
C-package
T
heat sink
= 70°C, T
term
=115°C
®
SKiiP
®
3
SK integrated intelligent
Power PACK
2-pack
SKiiP 1213GB171-3DL
2)
Target data
housing S33
Characteristics
Symbol
IGBT
5)
V
CEsat
V
CEO
r
CE
E
on
+ E
off
I
CES
L
CE
R
CC´-EE´
4)
Conditions
1)
min.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
typ.
max.
Units
V
V
mΩ
mJ
mJ
mA
nH
mΩ
V
V
mΩ
mJ
mJ
°C/W
°C/W
°C/W
A
A
I
C
= 900A, T
j
= 25 (125)°C
V
GE
= 15V; T
j
= 25 (125) °C
V
GE
= 15V; T
j
= 25 (125) °C
I
C
=900A
Vcc=900V
T
j
=125°C
Vcc=1200V
V
GE
=0,V
CE
=V
CES
,T
j
=25(125) °C
top, bottom
resistance, terminal-chip
2,7 (3,1)
3,2
1,5 (1,6) 1,7 (1,8)
1,4 (1,9) 1,8 (2,2)
900
−
1327
−
3,6 (216)
−
4
−
0,13
−
2,0 (1,8)
2,3
1,5 (1,2) 1,7 (1,4)
0,7 (0,8) 0,8 (0,9)
108
−
158
−
−
−
−
3 * 400
3 * 500
0,021
0,042
0,033
Inverse diode
5)
V
F
= V
EC
I
F
= 900A; T
j
= 25(125) °C
V
TO
T
j
= 25 (125) °C
r
T
T
j
= 25 (125) °C
I
C
=900A
Vcc=900V
4)
E
RR
T
j
=125°C
Vcc=1200V
Thermal characteristics
R
thjs
per IGBT
R
thjs
per diode
2)
R
thsa
L: P16 heat sink; 280 m3/ h
Current sensor
I
p RMS
T
a
=100° C , V
supply
=
±
15V
I
pmax RMS
t
≤
2 s, T
a
=100° C
Mechanical data
M1
DC terminals, SI Units
M2
AC terminals, SI Units
Features
•
SKiiP technology inside
-
pressure contact of ceramic
to heat sink; low thermal
impedance
-
pressure contact of main
electric terminals
-
pressure contact of auxiliary
electric terminals
-
increased thermal cycling
capability
-
low stray inductance
-
homogenous current
distribution
•
CAL diode technology
•
integrated current sensor
•
integrated temperature sensor
•
high power density
1)
2)
4
8
−
−
6
10
Nm
Nm
3)
4)
5)
8)
T
heatsink
= 25 °C, unless
otherwise specified
D integrated gate driver
U with DC-bus voltage
measurement (option for GB)
L mounted on standard heat
sink for forced air cooling
W mounted on standard liquid
cooled heat sink
T
term
= temperature of terminal
with SKiiP 3 gate driver
Measured at chip level
external paralleling necessary
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expressed or implied is made regarding delivery, performance or suitability.
B 7
−
24
25.01.01 09:41
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SEMIKRON
Embedded System
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