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BSM300GAR120DLCHOSA2

Description
Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
CategoryDiscrete semiconductor    The transistor   
File Size306KB,10 Pages
ManufacturerEUPEC [eupec GmbH]
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BSM300GAR120DLCHOSA2 Overview

Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

BSM300GAR120DLCHOSA2 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionMODULE-5
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)625 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)650 ns
Nominal on time (ton)190 ns
Technische Information / technical information
IGBT-Module
IGBT-modules
62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode
62mm C-series module with low loss IGBT2 and EmCon diode
BSM300GAR120DLC
Vorläufige Daten / preliminary data
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