SUF-4000 datasheet, PDF - EEWORLD Datasheet

SUF-4000

0.15GHz to

10GHz, Cas-

cadable

pHEMT MMIC

Amplifier

SUF-4000

0.15GHz to 10GHz, CASCADABLE pHEMT

MMIC AMPLIFIER

Package: 0.88mmx0.80mm

Product Description

RFMD’s SUF-4000 is a monolithically matched broadband high IP

3

gain

block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses

a patented self-bias Darlington topology featuring a gain and temperature

compensating active bias network that operates from a single 5V supply.

It offers efficient, cascadable performance in a compact

0.88mmx0.80mm die. It is well suited for RF, LO, and driver applications.

Gain & Return Loss vs. Frequency

(GSG Probe Data)

30

25

20

IRL

GAIN

15

\

10

ORL

5

0

3

6

9

12

15

Fre que ncy (Ghz)

-25

-30

-20

-15

0

-5

-10

Features

Broadband Performance

High Gain=17.0dB at 2GHz

P

1dB

=21dBm at 2GHz

Low-Noise, Efficient Gain Block

5V Operation, No Dropping

Resistor

Low Gain Variation vs. Tempera-

ture

Patented Thermal Design

Return Loss (dB)

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

Gain (dB)

SiGe BiCMOS

Patented Self-Bias Darlington

Topology

Applications

Broadband Communication

Test Instrumentation

Military and Space

LO and IF Mixer Applications

High IP

3

RF Driver Applications

Parameter

Small Signal Power Gain

Min.

Specification

Typ.

Max.

Unit

Condition

17.0

dB

2GHz

14.5

dB

6GHz

Output Power at 1dB Compression

21.0

dBm

2GHz

20.0

dBm

6GHz

Output Third Order Intercept Point

32.0

dBm

2GHz

30.5

dBm

6GHz

Noise Figure

2.8

dB

2GHz

3.7

dB

6GHz

Input Return Loss

-12.0

dB

2GHz

-11.5

dB

6GHz

Output Return Loss

-18.0

dB

2GHz

-20.0

dB

6GHz

Reverse Isolation

-21.0

dB

2GHz

-20.0

dB

6GHz

Device Operating Voltage

5.0

V

Device Operating Current

73

mA

Gain Variation vs. Temperature

-0.01

dB/°C

Thermal Resistance

164

°C/W

junction to backside

Test Conditions: V

S

=5V, I

D

=73mA, OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, Z

S

=Z

L

=50Ω, 25°C, GSG Probe Data with Bias Tees

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Rev A0 DS090605

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SUF-4000

Absolute Maximum Ratings

Parameter

Max Device Current (l

D

)

Max Device Voltage (V

D

)

Max RF Input Power

Max Dissipated Power

Max Junction Temperature (T

J

)

Operating Temperature Range (T

L

)

Max Storage Temperature

Rating

100

5.5

20

550

150

-40 to + 85

-65 to +150

Unit

mA

V

dBm

mW

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l and T

L

=Backside of die

Typical Performance (GSG Probe Data)

V

D

Freq

Current

Gain

(GHz)

(mA)

(dB)

(V)

P

1dB

(dBm)

OIP

3

(dBm)

S11

(dB)

S22

(dB)

NF

(dB)

2.8

3.3

3.7

4.7

0.15

5

73

17.0

-18.0

0.50

5

73

17.0

-19.5

0.85

5

73

17.0

21.0

32.5

-20.0

-19.0

2.00

5

73

17.0

21.0

32.0

-18.5

4.00

5

73

16.0

20.5

31.0

-14.5

-18.5

6.00

5

73

14.5

20.0

30.5

-11.5

-20.0

10.00

5

73

11.0

-9.0

-16.5

Test Conditions: GSG Probe Data With Bias Tees, OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, 25°C

Typical Performance (GSG Probe Data)

S21 vs. Frequency

20

18

16

14

12

10

8

6

4

2

0

3

6

9

12

15

-20C

25C

85C

23

22

21

20

19

P1dB vs. Frequency

dBm

dB

18

17

16

15

14

13

0

1

2

3

4

5

6

7

8

9

10

25C

-20C

85C

Frequency (GHz)

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A0 DS090605

SUF-4000

S11 vs. Frequency

0

-5

-10

0

-5

-10

S22 vs. Frequency

dB

-15

-20

-25

-30

0

3

6

9

12

15

-20C

25C

85C

dB

-15

-20

-25

-30

0

3

6

9

12

15

-20C

25C

85C

Frequency (GHz)

OIP

3

vs. Frequency

35

7

6

5

Noise Figure vs. Fre que ncy

33

31

dBm

4

dB

29

3

25C

-20C

2

1

0

25C

-20C

85C

27

85C

25

0

1

2

3

4

5

6

7

0

1

2

3

4

5

6

7

8

9

10

Frequency (GHz)

Current Variation versus Temperature

Current vs. Voltage

80

75

70

mA

65

60

55

50

4.75

-20C

25C

85C

4.80

4.85

4.90

4.95

5.00

5.05

5.10

5.15

5.20

5.25

V

D

Rev A0 DS090605

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SUF-4000

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A0 DS090605

SUF-4000

Function

Description

This pad is DC coupled and matched to 50Ω. An external DC block is required.

1

RFIN

2

RFOUT/BIAS

This pad is DC coupled and matched to 50Ω. Bias is applied through this pad.

Die bottom must be connected to RF/DC ground using silver-filled epoxy.

Die

GND

Bottom

Pad Description

1

2

Notes:

1. All dimensions in inches (millimeters).

2. No connection required for unlabeled bond pads.

3. Die thickness is 0.004 [0.10]

4. Typical bond pad is 0.004 [0.10] square.

5. Backside metalization: Gold.

6. Backside is ground.

7. Bond pad metalization: Gold.

Rev A0 DS090605

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 6

Parameter Name	Attribute value
Maker	Qorvo
package instruction	DIE OR CHIP
Reach Compliance Code	unknown
Other features	LOW NOISE
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	14.5 dB
Maximum input power (CW)	10 dBm
Number of functions	1
Maximum operating frequency	10000 MHz
Minimum operating frequency	150 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Encapsulate equivalent code	DIE OR CHIP
power supply	5 V
RF/Microwave Device Types	WIDE BAND LOW POWER
technology	GAAS

	SUF-4000
Description	Wide Band Low Power Amplifier, 150MHz Min, 10000MHz Max, 1 Func, GAAS, 0.88 X 0.80 MM, DIE-2
Maker	Qorvo
package instruction	DIE OR CHIP
Reach Compliance Code	unknown
Other features	LOW NOISE
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	14.5 dB
Maximum input power (CW)	10 dBm
Number of functions	1
Maximum operating frequency	10000 MHz
Minimum operating frequency	150 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Encapsulate equivalent code	DIE OR CHIP
power supply	5 V
RF/Microwave Device Types	WIDE BAND LOW POWER
technology	GAAS

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