SKHI 21 A, SKHI 22 A / B
Absolute Maximum Ratings
Symbol Term
V
S
V
iH
Iout
PEAK
Iout
AVmax
f
max
V
CE
dv/dt
V
isolIO
V
isol12
R
Gonmin
R
Goffmin
Q
out/pulse
T
op
T
stg
Supply voltage prim.
Input signal volt. (High)
SKHIxxA
SKHI22B
Values
18
V
S
+ 0,3
5 + 0,3
8
40
50
1700
50
2500
4000
1500
3
3
4
1)
- 40... + 85
- 40... + 85
Units
V
V
V
A
mA
kHz
V
kV/µs
Vac
Vac
V
Ω
Ω
µC
°C
°C
SEMIDRIVER
®
Hybrid Dual IGBT Driver
SKHI 22 A / B
•
Double driver for halfbridge
Output peak current
Output average current
max. switching frequency
Collector emitter voltage sense across the
IGBT
Rate of rise and fall of voltage secondary
to primary side
Isolation test voltage
Standard
input-output (2 sec.AC)
Version „H4"
Isolation test voltage ouput 1 - output 2
(2 sec.AC)
Minimum rating for R
Gon
Minimum rating for R
Goff
Max. rating for output charge per pulse
Operating temperature
Storage temperature
IGBT modules
•
SKHI 22 A/B H4 is for 1700
V-IGBT
•
SKHI 22 A is compatible to
old SKHI 22
•
SKHI 22 B has additional
functionality
Hybrid Dual MOSFET
Driver
SKHI 21 A
•
drives MOSFETs with
V
DS(on)
< 10 V
•
is compatible to old SKHI 21
Preliminary Data
Electrical Characteristics (T
a
= 25 °C)
Symbol Term
V
S
I
SO
V
i
V
iT+
V
iT-
R
in
V
G(on)
V
G(off)
R
GE
f
ASIC
t
d(on)IO
t
d(off)IO
t
d(err)
t
p
ERRRESET
t
TD
V
CEstat
C
ps
MTBF
m
Supply voltage primary side
Supply current primary side (no load)
Supply current primary side (max.)
Input signal voltage
SKHIxxA on/off
SKHI22B on/off
Input threshold voltage (High) SKHIxxA
SKHI22B
Input threshold voltage (Low) SKHIxxA
SKHI22B
Input resistance
Turn on gate voltage output
Turn off gate voltage output
SKHIxxA
SKHI22B
SKHI22x
SKHI21A
min.
14,4
–
–
–
–
10,9
3,5
4,7
1,5
–
–
–
–
–
–
–
0,85
0,85
–
–
3,3
0
–
–
–
–
–
Values
typ. max. Units
15
80
–
15 / 0
5/0
11,7
3,7
5,5
1,75
10
3,3
+15
-7
0
22
8
1
1
0,6
9
–
–
5
2)
6
3)
12
2,0
45
15,6
–
290
–
–
12,5
3,9
6,5
2,0
–
–
–
–
–
–
–
1,15
1,15
–
–
4,3
4,3
10
10
–
–
–
V
mA
mA
V
V
V
V
V
V
kΩ
kΩ
V
V
V
kΩ
MHz
µs
µs
µs
µs
µs
µs
V
V
pF
10
6
g
h
I:\Marketin\FRAMEDAT\datbl\Treiber\SKHI22a.fm
Internal gate-emitter resistance
Asic system switching frequency
Input-output turn-on propagation time
Input-output turn-off propagation time
Error input-output propagation time
Error reset time
Top-Bot Interlock Dead Time SKHIxxA
SKHI22B
Reference voltage for V
CE
-monitoring
Coupling capacitance primary secondary
Mean Time Between Failure T
a
= 40° C
weight
Features
•
CMOS compatible inputs
•
Short circuit protection by V
CE
monitoring and switch off
•
Drive interlock top/bottom
•
Isolation by transformers
•
Supply undervoltage protection
(13 V)
•
Error latch/output
Typical Applications
•
Driver for IGBT and MOSFET
modules in bridge circuits in
choppers, inverter drives, UPS
and welding inverters
•
DC bus voltage up to 1200V
1)
2)
see fig. 6
At R
CE
= 18 kΩ, C
CE
= 330pF
3)
At R
CE
= 36 kΩ, C
CE
= 470pF,
R
VCE
= 1kΩ
© by SEMIKRON
031127
1
SKHI 21 A, SKHI 22 A / B
External Components
Component
R
CE
Function
Reference voltage for V
CE
-monitoring
10
⋅
R
CE
(
kΩ
)
V
CEstat
(
V
)
= ------------------------------------ –
1,4
10
+
R
CE
(
kΩ
)
with R
VCE
= 1kΩ (1700V IGBT):
10
⋅
R
CE
(
kΩ
)
V
CEstat
(
V
)
= ------------------------------------ –
1,8
10
+
R
CE
(
kΩ
)
(1.1)
(1)
Recommended Value
10kΩ < R
CE
< 100kΩ
18kΩ for SKM XX 123 (1200V)
36kΩ for SKM XX 173 (1700V)
C
CE
Inhibit time for V
CE
- monitoring
15
–
V
CEstat
(
V
)
-
t
min
=
τ
CE
⋅
ln
----------------------------------------
10
–
V
CEstat
(
V
)
(2)
C
CE
< 2,7nF
0,33nF for SKM XX 123 (1200V)
0,47nF for SKM XX 173 (1700V)
0,5µs < t
min
< 10µs
(3)
10
⋅
R
CE
(
kΩ
)
τ
CE
( µs )
=
C
CE
(
nF
) ⋅
------------------------------------
10
+
R
CE
(
kΩ
)
R
VCE
R
ERROR
Collector series resistance for 1700V IGBT-
operation
Pull-up resistance at error output
U
Pull
–
Up
-----------------------
<
15mA
-
R
ERROR
1kΩ / 0,4W
1kΩ < R
ERROR
< 10kΩ
R
GON
R
GOFF
4)
5)
Turn-on speed of the IGBT
4)
Turn-off speed of the IGBT
5)
R
GON
> 3Ω
R
GOFF
> 3Ω
Higher resistance reduces free-wheeling diode peak recovery current, increases IGBT turn-on time.
Higher resistance reduces turn-off peak voltage, increases turn-off time and turn-off power dissipation
2
031127
© by SEMIKRON
SKHI 21 A, SKHI 22 A / B
PIN array
Fig. 2 shows the pin arrays. The input side (primary side) comprises 10 inputs (SKHI 22A / 21A 8 inputs), forming the
interface to the control circuit (see fig.1).
The output side (secondary side) of the hybrid driver shows two symmetrical groups of pins with 4 outputs, each forming
the interface to the power module. All pins are designed for a grid of 2,54 mm.
Primary side PIN array
PIN No. Designation
P14
P13
P12
P11
P10
P9
GND / 0V
V
S
V
IN1
free
/ERROR
TDT2
Explanation
related earth connection for input signals
+ 15V
±
4% voltage supply
switching signal input 1 (TOP switch)
positive 5V logic (for SKHI22A /21A, 15V logic)
not wired
error output, low = error; open collector output; max 30V / 15mA
(for SKHI22A /21A, internal 10kΩ pull-up resistor versus V
S
)
signal input for digital adjustment of interlocking time;
SKHI22B: to be switched by bridge to GND (see fig. 3)
SKHI22A /21A: to be switched by bridge to V
S
switching signal input 2 (BOTTOM switch);
positive 5V logic (for SKHI22A /21A, 15V logic)
related earth connection for input signals
signal input for neutralizing locking function;
to be switched by bridge to GND
signal input for digital adjustment of locking time;
to be switched by bridge to GND
P8
P7
P6
P5
V
IN2
GND / 0V
SELECT
TDT1
ATTENTION:
Inputs P6 and P5 are not existing for SKHI 22A/ 21A. The contactor tracks of the digital input signals P5/
P6/ P9 must not be longer than 20 mm to avoid interferences, if no bridges are connected.
Secondary side PIN array
PIN No. Designation Explanation
S20
S15
S14
S13
S12
I:\Marketin\FRAMEDAT\datbl\Treiber\SKHI22a.fm
V
CE1
C
CE1
G
ON1
G
OFF1
E1
V
CE2
C
CE2
G
ON2
G
OFF2
E2
collector output IGBT 1 (TOP switch)
reference voltage adjustment with R
CE
and C
CE
gate 1 R
ON
output
gate 1 R
OFF
output
emitter output IGBT 1 (TOP switch)
collector output IGBT 2 (BOTTOM switch)
reference voltage adjustment with R
CE
and C
CE
gate 2 R
ON
output
gate 2 R
OFF
output
emitter output IGBT 2 (BOTTOM switch)
S1
S6
S7
S8
S9
ATTENTION:
The connector leads to the power module should be as short as possible.
© by SEMIKRON
031127
3
4
Isolation
over
current
S20 VCE** * RVCE
S15
VS
=
=
S14
Ron
Power
driver S13 Roff
over
current
VS
=
=
Power
driver
4
5
LOAD
output2
(BOTTOM
S7
S8
S9
secondary side
output
R on
R off
7
2
SEMITRANS
IGBT-Module
6
3
RCE C CE
output1
(TOP)
SKHI 21 A, SKHI 22 A / B
Fig. 1 Block diagram of SKHI 22 A / B / 21 A
input1
6k8/100
(TOP) V iT
P12 3k2
-input buffer
-short pulse
supression
-pulse shaper
031127
input2
(BOTTOM) 6k8/100
ViB
P8
3k2
P7
GND/OV
GND/OV
P14
TDT2 P9
* **
TDT1 P5
-interlock
-deadtime
***
SELECT P6
V
* * * VS
Error P10
-Vs monitor
RERROR
-Error monitor
S12
1
** R
S1 VCE VCE
*
RCE C CE
S6
-Error memory
integrated in ASIC
primary side
VS
P13 S
V
input
© by SEMIKRON
* When SKHI22B is driving 1700V IGBTs, a 1kΩ / 0,4W R
VCE
-resistor must be connected in series to the V
CE
input.
** The VCE-terminal is to be connected to the IGBT collector C. If the V
CE
-monitoring is not used, connect S1 to S9 or S20 to S12 respectively.
*** Terminals P5 and P6 are not existing for SKHI22A/21A; internal pull-up resistor exists in SKHI22A/21A only.
1-7 Connections to SEMITRANS GB-module
SKHI 21 A, SKHI 22 A / B
VCE
OUT1
SKHI XX Y
±0.2
ERROR
TDT2
V IN2
GND/0V
SELECT
TDT1
R2
Date - Code
GND/0V
VS
V IN1
CCE
GON
GOFF
E
55
E
GOFF
GON
CCE
OUT2
VCE
55
±0.2
detail "A" on scale 10 : 1
0.25x0.5
50.8
±0.3
measured from pin-centre to pin-centre
A
9.5
16
15
15.75
18.25
±0.3
13.53
±0.3
S1
P5
P6
S6
I:\Marketin\FRAMEDAT\datbl\Treiber\SKHI22a.fm
S9
22.86
3.37
S12
P13
P14
S15
A
S20
A
Fig. 2 Dimension drawing and PIN array (P5 and P6 are not existing for SKHI22A/21A)
© by SEMIKRON
031127
48.26
2.54
3.5
±0.5
5
京公网安备 11010802033920号
EEWORLD
