UNISONIC TECHNOLOGIES CO., LTD
UP1868
LOW SATURATION VOLTAGE
PNP POWER TRANSISTOR
FEATURES
* Low saturation voltage with equivalent on-resistance be R
CE(SAT)
about 40mΩ at 5A)
* High gain that can be replace parts for power MOSFET.
1
PNP SILICON TRANSISTOR
SOT-223
1
SOT-89
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
UP1868-AA3-R
UP1868-AB3-R
UP1868L-AA3-F-R
UP1868L-AB3-F-R
Package
SOT-223
SOT-89
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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UP1868
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
C(PEAK)
-20
A
Continuous Collector Current
I
C
-6
A
SOT-223
3
W
Power Dissipation
P
C
SOT-89
0.75
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
MIN
BV
CBO
I
C
=-100µA
-15
Breakdown Voltage (Note)
BV
CEO
I
C
=-10mA
-12
BV
EBO
I
E
=-100µA
-6
I
C
=-500mA,I
B
=-5mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-2A, I
B
=-50mA
(Note)
I
C
=-6A, I
B
=-250mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=-6A, I
B
=-250mA
Base-Emitter Turn-On Voltage (Note)
V
BE(ON)
V
CE
=-1V, I
C
=-6A
V
CB
=-12V
Collector Cut-Off Current
I
CBO
V
CB
=-12V,T
A
=100°C
Emitter Cut-Off Current
I
EBO
V
EB
=-6V
h
FE1
V
CE
=-1V , I
C
=-10mA
300
h
FE2
V
CE
=-1V , I
C
=-500mA
300
DC Current Gain (Note)
h
FE3
V
CE
=-1V , I
C
=-5mA
200
h
FE4
V
CE
=-1V , I
C
=-10A
150
Current Gain Bandwidth Product
f
T
V
CE
=-10V, I
C
=-100mA, f=50MHz
Output Capacitance
C
ob
V
CB
=-20V, f=1MHz
I
C
=-4A, I
B1
=-400mA
t
ON
Switching Times
t
OFF
I
B2
=400mA, V
CC
=-10V
Note: Pulse test: Pulse Width=300μs, Duty Cycle≦2%
PARAMETER
MAX UNIT
V
V
V
-55
-100 mV
-132 -160 mV
-440 mV
-1050 -1200 mV
-950 -1050 mV
-10
nA
-1.0
µA
-10
nA
1000
TYP
80
161
120
116
MHz
pF
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
Saturation Voltage, V
CE(SAT)
(V)
V
BE(ON)
vs I
C
1.4
V
CE
=1V
Turn on Voltage, V
BE(ON)
(V)
-20℃
+25℃
+100℃
0.7
Collector Current, I
C
(A)
10
100
Saturation Voltage, V
CE(SAT)
(V)
Safe Operating Area
DC
1
1s
10ms
100µs
0
1m
10m
100m
1
10
0.1
0.1
1
10
Collector Current, I
C
(A)
Collector Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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