1.5 GHz SILICON MMIC UPC2710T
WIDE-BAND AMPLIFIER UPC2713T
FEATURES
• FREQUENCY RESPONSE:
1.5 GHz
• HIGH GAIN:
33 dB (UPC2710T)
Gain, G
S
(dB)
•
SATURATED OUTPUT POWER:
+13.5 (UPC2710T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
•
TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
Frequency, f (GHz)
DESCRIPTION
The UPC2710T and UPC2713T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require high
gain and wide-band operation. They are designed for low cost
gain stages in cellular radios, GPS receivers, DBS tuners,
PCN, and test/measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C,
f = 0.5 GHz, V
CC
= 5 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
f
U
∆G
S
P
SAT
P
1dB
NF
RL
IN
RL
OUT
ISOL
∆G
T
R
TH
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 ~ 0.6 GHz
f = 0.1∼ 0.8 GHz
Saturated Output Power
Output Power at 1dB Compression Point
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain -Temperature Coefficient
Thermal Resistance (Junction to Ambient)
UNITS
mA
dB
GHz
dB
dBm
dBm
dB
dB
dB
dB
dB/°C
°C/W
3
9
34
11
MIN
16
30
0.7
UPC2710T
T06
TYP
22
33
1.0
±0.8
13.5
7.5
3.5
6
12
39
-0.006
200
5
10
6
35
4
MAX
29
36.5
MIN
9
26
0.9
UPC2713T
T06
TYP
12
29
1.2
±0.8
7
-4
3.2
13
9
40
-0.016
200
4.5
MAX
15
33
California Eastern Laboratories
UPC2710T, UPC2713T
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CC
P
IN
P
T
T
OP
T
STG
PARAMETERS
Supply Voltage
Input Power
Power Dissipation
Operating Temperature
Storage Temperature
UNITS
V
dBm
mW
°C
°C
RATINGS
6
+10
280
2
-40 to +85
-55 to +150
RECOMMENDED
OPERATING CONDITIONS
SYMBOL
V
CC
PARAMETER
Supply Voltage
UNITS
V
MIN
4.5
TYP MAX
5.0
5.5
TEST CIRCUIT
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= +85°C).
*
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
* UPC2710T only
CIRCUIT CURRENT vs. VOLTAGE
CIRCUIT CURRENT vs. TEMPERATURE
Circuit Current, I
CC
(mA)
Supply Voltage, V
CC
(V)
UPC2710T
NOISE FIGURE AND
INSERTION GAIN vs. FREQUENCY
Circuit Current, I
CC
(mA)
Operating Temperature, T
OP
(°C)
UPC2713T
NOISE FIGURE AND
INSERTION GAIN vs. FREQUENCY
Insertion Power Gain, G
P
(dB)
Insertion Power Gain, G
P
(dB)
Noise Figure, NF (dB)
Frequency, f (GHz)
Frequency, f (GHz)
Noise Figure, NF (dB)
UPC2710T, UPC2713T
TYPICAL PERFORMANCE CURVES
(T
A
= 25° C)
UPC2710T
RETURN LOSS vs. FREQUENCY
UPC2713T
RETURN LOSS vs. FREQUENCY
Input Return Loss, RL
IN
(dB)
Output Return Loss, RL
OUT
(dB)
Frequency, f (GHz)
Input Return Loss, RL
IN
(dB)
Output Return Loss, RL
OUT
(dB)
Frequency, f (GHz)
UPC2710T
ISOLATION vs. FREQUENCY
0
UPC2713T
ISOLATION vs. FREQUENCY
V
CC
= 5.0V
Isolation, ISOL (dB)
Isolation, ISOL (dB)
-10
-20
-30
-40
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
UPC2710T
POWER vs. FREQUENCY
UPC2713T
POWER vs. FREQUENCY
X
Power (dBm)
Frequency, f (GHz)
X: Typical SSB Third Order Intercept Point
Power (dBm)
Frequency, f (GHz)
X: Typical SSB Third Order Intercept Point
UPC2710T, UPC2713T
TYPICAL PERFORMANCE CURVES
(T
A
= 25° C)
UPC2710T
OUTPUT POWER vs.
INPUT POWER AND VOLTAGE
UPC2713T
OUTPUT POWER vs.
INPUT POWER AND VOLTAGE
Output Power, P
OUT
(dBm)
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
UPC2710T
OUTPUT POWER vs.
INPUT POWER AND TEMPERATURE
UPC2713T
OUTPUT POWER vs.
INPUT POWER AND TEMPERATURE
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
NOISE FIGURE vs. FREQUENCY
Noise Figure, NF (dB)
Frequency, f (GHz)
Embedded System
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