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NX8570SC330Q-BA

Description
Laser Diode, 1550nm,
CategoryLED optoelectronic/LED    photoelectric   
File Size152KB,15 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

NX8570SC330Q-BA Overview

Laser Diode, 1550nm,

NX8570SC330Q-BA Parametric

Parameter NameAttribute value
MakerNEC Electronics
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER
Number of functions1
Maximum operating temperature70 °C
Minimum operating temperature-20 °C
Optoelectronic device typesLASER DIODE
Nominal output power20 mW
peak wavelength1550 nm
shapeRECTANGULAR
Maximum threshold current40 mA
DATA SHEET
LASER DIODE
NX8570SCxxxQ-BA
1 550 nm CW LIGHT SOURCE
InGaAsP MQW-DFB LASER DIODE MODULE
WITH WAVELENGTH MONITOR
DESCRIPTION
The NX8570SCxxxQ-BA is a 1 550 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode module with wavelength
monitor function.
This device is temperature tunable over 8
×
50 GHz
channels. Available at both C-band (1 530.334 to 1 565.087 nm) and L-band
(1 565.496 to 1 608.760 nm) ITU-T grid wavelengths.
This device is designed as CW light source and ideal for transmission
systems in which external modulators are used.
FEATURES
• Wavelength monitor function (Etalon Filter, Wavelength monitor PD)
• Optical output power
P
f
= 20 mW MIN.
• Available for DWDM wavelengths based on ITU-T recommendations
(50 GHz grid, please refer to the
ORDERING INFORMATION)
• 8 channel wavelength tunable capability for 50 GHz-spacing
• Internal thermo-electric cooler and isolator
• Hermetically sealed 14-pin butterfly package
• Polarization maintain fiber pigtail
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10276EJ02V0DS (2nd edition)
Date Published September 2005 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2003, 2005

NX8570SC330Q-BA Related Products

NX8570SC330Q-BA NX8570SC362Q-BA NX8570SC393Q-BA
Description Laser Diode, 1550nm, Laser Diode, 1550nm, Laser Diode, 1550nm,
Maker NEC Electronics NEC Electronics NEC Electronics
Reach Compliance Code unknown unknown unknown
Configuration SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER
Number of functions 1 1 1
Maximum operating temperature 70 °C 70 °C 70 °C
Minimum operating temperature -20 °C -20 °C -20 °C
Optoelectronic device types LASER DIODE LASER DIODE LASER DIODE
Nominal output power 20 mW 20 mW 20 mW
peak wavelength 1550 nm 1550 nm 1550 nm
shape RECTANGULAR RECTANGULAR RECTANGULAR
Maximum threshold current 40 mA 40 mA 40 mA

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