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576MS-40-800

Description
DRAM
Categorystorage    storage   
File Size3MB,66 Pages
ManufacturerRambus Inc
Download Datasheet Parametric View All

576MS-40-800 Overview

DRAM

576MS-40-800 Parametric

Parameter NameAttribute value
MakerRambus Inc
package instruction,
Reach Compliance Codeunknown
RDRAM
512Mb (1024Kx16/18x32s)
Advance Information
Overview
The RDRAM device is a general purpose high-performance
memory device suitable for use in a broad range of applications
including computer memory, graphics, video, and any other
application where high bandwidth and low latency are required.
The 512/576 Mb RDRAM devices are extremely high-speed
CMOS DRAMs organized as 32M words by 16 or 18 bits. The
use of Rambus Signaling Level (RSL) technology permits
800MHz to 1600MHz transfer rates while using conventional
system and board design technologies. RDRAM devices are
capable of sustained data transfers up to 0.625ns per two bytes
(5.0 ns per sixteen bytes).
The architecture of the RDRAM devices allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and data
buses with independent row and column control yield over
95% bus efficiency. The RDRAM device’s 32 banks support
up to four simultaneous transactions.
System-oriented features for mobile, graphics and large mem-
ory systems include power management, byte masking, and
x18 organization. The two data bits in the x18 organization are
general and can be used for additional storage and bandwidth
or for error correction.
Figure 1: 1600 MHz RDRAM CSP Package
The 512/576 Mb RDRAM devices are offered in a CSP hori-
zontal package suitable for desktop as well as low-profile add-
in card and mobile applications.
Key Timing Parameters/Part Numbers
Organization
a
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx16x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
1024Kx18x32s
I/O Freq.
MHz
800
800
1066
1066
1066
1066
1200
1200
1333
1333
1600
1600
800
800
1066
1066
1066
1066
1200
1200
1333
1333
1600
1600
Timing Bin
45
40
35
32
32P
30
32
30
31
28
31
27
45
40
35
32
32P
30
32
30
31
28
31
27
Part
Number
512Ms-45-800
512Ms-40-800
512Ms-35-1066
512Ms-32-1066
512Ms-32P-1066
512Ms-30-1066
512Ms-32-1200
512Ms-30-1200
512Ms-31-1333
512Ms-28-1333
512Ms-31-1600
512Ms-27-1600
576Ms-45-800
576Ms-40-800
576Ms-35-1066
576Ms-32-1066
576Ms-32-1066
576Ms-30-1066
576Ms-32-1200
576Ms-30-1200
576Ms-31-1333
576Ms-28-1333
576Ms-31-1600
576Ms-27-1600
Features
High sustained bandwidth per DRAM device
•Up to 3.2 GB/s sustained data transfer rate
•Separate control and data buses for maximized efficiency
•Separate row and column control buses for easy schedul-
ing and highest performance
•32 banks: four transactions can take place simultaneously
at full bandwidth data rates
Low latency features
•Write buffer to reduce read latency
•3 precharge mechanisms for controller flexibility
•Interleaved transactions
Advanced power management:
•Multiple low power states allows flexibility in power
consumption versus time to transition to active state
•Power-down self-refresh
Organization: 2 KB pages and 32 banks, x 16/18
•x18 organization allows ECC configurations or increased
storage/bandwidth
•x16 organization for low cost applications
Uses RSL for up to 1600MHz operation
a. The bank designations are described in "Row and Column Cycle
Description" on page 17.
32s - 32 banks that use a “split” bank architecture.
Related Documentation
Datasheets for the RDRAM memory system components are
available on the Rambus website at
www.rambus.com.
Please
obtain the "Documentation Change History"for this datasheet.
The DCH is an integral part of the data sheet and contains the
most recent information about changes made to the published
version. Check the RDRAM website regularly for the latest
DCH and datasheet updates.
Version 0.3
DL-0205-01
Advance Information
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