RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN
| Parameter Name | Attribute value |
| Maker | Mitsubishi |
| package instruction | MICROWAVE, R-CQMW-F4 |
| Contacts | 4 |
| Reach Compliance Code | unknown |
| Other features | LOW NOISE, HIGH RELIABILITY |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Maximum drain current (ID) | 0.06 A |
| FET technology | METAL SEMICONDUCTOR |
| highest frequency band | KU BAND |
| JESD-30 code | R-CQMW-F4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 150 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | MICROWAVE |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 0.2 W |
| Minimum power gain (Gp) | 16.8 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | QUAD |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| MGF1425B-01 | MGF1425BV-01 | MGF1425BX-01 | |
|---|---|---|---|
| Description | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GD-9, 4 PIN |
| package instruction | MICROWAVE, R-CQMW-F4 | MICROWAVE, R-CQMW-F4 | MICROWAVE, R-CQMW-F4 |
| Contacts | 4 | 4 | 4 |
| Reach Compliance Code | unknown | unknown | unknow |
| Other features | LOW NOISE, HIGH RELIABILITY | LOW NOISE, HIGH RELIABILITY | LOW NOISE, HIGH RELIABILITY |
| Shell connection | SOURCE | SOURCE | SOURCE |
| Configuration | SINGLE | SINGLE | SINGLE |
| Maximum drain current (ID) | 0.06 A | 0.06 A | 0.06 A |
| FET technology | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| highest frequency band | KU BAND | KU BAND | KU BAND |
| JESD-30 code | R-CQMW-F4 | R-CQMW-F4 | R-CQMW-F4 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROWAVE | MICROWAVE | MICROWAVE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Minimum power gain (Gp) | 16.8 dB | 16.8 dB | 16.8 dB |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | FLAT | FLAT | FLAT |
| Terminal location | QUAD | QUAD | QUAD |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| Maker | Mitsubishi | - | Mitsubishi |
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