DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC1679G
5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND
Si MMIC AMPLIFIER
DESCRIPTION
The
µ
PC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high
frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter
stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP.
This IC is manufactured using NEC’s 20 GHz f
T
NESAT
TM
IV silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Saturated output power
• Wideband response
• Isolation
• Power Gain
: V
CC
= 4.5 to 5.5 V
: P
O(sat)
= +15.5 dBm TYP. @ f = 500 MHz with external inductor
: f
u
= 1.8 GHz TYP. @ 3 dB bandwidth
: ISL = 34 dB TYP. @ f = 500 MHz
: G
P
= 21.5 dB TYP. @ f = 500 MHz
ORDERING INFORMATION
Part Number
Package
8-pin plastic SOP (225 mil)
Marking
1679
Supplying Form
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
Embossed tape 12 mm wide.
1 pin is tape roll-in direction.
Qty 2.5 kp/reel.
µ
PC1679G-E1
µ
PC1679G-E2
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
µ
PC1679G)
Caution Electro-static sensitive devices.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12434EJ4V0DS00 (4th edition)
Date Published September 1999 N CP(K)
Printed in Japan
The mark
shows major revision points.
©
1994, 1999
µ
PC1679G
EQUIVALENT CIRCUIT
8 V
CC
5 OUT
PIN CONNECTIONS
(Top View)
INPUT
GND
GND
1
2
3
4
8
7
6
5
V
CC
GND
GND
OUTPUT
IN 1
GND
6
7
2
3
4
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input Power
Power Dissipation
Symbol
V
CC
P
in
P
D
Conditions
T
A
= +25 °C, pin 5, pin 8
T
A
= +25 °C
Mounted on double copper clad 50
×
50
×
1.6 mm
epoxy glass PWB (T
A
= +85 °C)
Rating
6
+10
360
−45
to +85
−55
to +150
Unit
V
dBm
mW
Operating Ambient Temperature
Storage Temperature
T
A
T
stg
°C
°C
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Symbol
V
CC
MIN.
4.5
−45
TYP.
5.0
MAX.
5.5
Unit
V
Notice
The same voltage should be applied
to pin 5 and 8
Operating Ambient Temperature
T
A
+25
+85
°C
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C, V
CC
= V
out
= 5.0 V, Z
S
= Z
L
= 50
Ω
)
Parameter
Circuit Current
Power Gain
Noise Figure
Upper Limit Operating Frequency
Isolation
Input Return Loss
Output Return Loss
Saturated Output Power
Symbol
I
CC
G
P
NF
f
u
ISL
RL
in
RL
out
P
O(sat)
No signal
f = 500 MHz
f = 500 MHz
3 dB down below the gain at 0.1 GHz
f = 500 MHz
f = 500 MHz
f = 500 MHz
f = 500 MHz, P
in
= +3 dBm
Conditions
MIN.
32
19.5
−
1.5
29
9
1
+13.5
TYP.
40
21.5
6.0
1.8
34
12
3
+15.5
MAX.
49
23.5
8.0
−
−
−
−
−
Unit
mA
dB
dB
GHz
dB
dB
dB
dBm
2
Data Sheet P12434EJ4V0DS00
µ
PC1679G
TEST CIRCUIT
V
CC
1 800 pF
C
3
8
50
Ω
IN
1 800 pF
C
1
1
5
1 800 pF
L
C
2
L: 20.5 T, 2 mm I.D.,
φ
0.25 UEW
(about 300 nH)
50
Ω
OUT
2, 3, 4, 6, 7
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 30 mA, to output medium power. To supply current for output
transistor, connect an inductor between the V
CC
pin (pin 8) and output pin (pin 5). Select large value inductance, as
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE V
CC
, INPUT AND OUTPUT PINS
Capacitors of 1 800 pF are recommendable as the bypass capacitor for the V
CC
pin and the coupling capacitors
for the input and output pins.
The bypass capacitor connected to the V
CC
pin is used to minimize ground impedance of V
CC
pin. So, stable bias
can be supplied against V
CC
fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50
Ω
load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 800 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2
πRfc).
Data Sheet P12434EJ4V0DS00
3
µ
PC1679G
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25 °C)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
60
No Signal
50
50
60
No Signal
V
CC
= 5.0 V
CIRCUIT CURRENT vs. OPERATATING
AMBIENT TEMPERATURE
Circuit Current I
CC
(mA)
40
30
20
10
0
Circuit Current I
CC
(mA)
0
1
2
3
4
5
6
40
30
20
10
0
–60 –40 –20
0
+20 +40 +60 +80 +100
Supply Voltage V
CC
(V)
Operating Ambient Temperature T
A
(°C)
NOISE FIGURE AND INSERTION
POWER GAIN vs. FREQUENCY
9
25
V
CC
= 5.5 V
25
INSERTION POWER GAIN vs. FREQUENCY
V
CC
= 5.0 V
T
A
= –45
°C
Insertion Power Gain G
P
(dB)
8
20
G
P
V
CC
= 5.0 V
15
V
CC
= 4.5 V
Insertion Power Gain G
P
(dB)
20
T
A
= +25
°C
T
A
= +85
°C
Noise Figure NF (dB)
7
15
6
10
V
CC
= 5.5 V
5
NF
0
0.01
0.03
V
CC
= 5.0 V
0.1
0.3
V
CC
= 4.5 V
1.0
3.0
10
5
5
4
0
0.01
0.03
0.1
0.3
1.0
3.0
Frequency f (GHz)
Frequency f (GHz)
ISOLATION vs. FREQUENCY
0
V
CC
= 5.0 V
–10
+10
INPUT RETURN LOSS AND OUTPUT
RETURN LOSS vs. FREQUENCY
V
CC
= 5.0 V
Input Return Loss RL
in
(dB)
Output Return Loss RL
out
(dB)
0
RL
out
Isolation ISL (dB)
–20
–10
RL
in
–30
–20
–40
–30
–50
0.01
0.03
0.1
0.3
1.0
3.0
–40
0.01
0.03
0.1
0.3
1.0
3.0
Frequency f (GHz)
Frequency f (GHz)
4
Data Sheet P12434EJ4V0DS00
µ
PC1679G
OUTPUT POWER vs. INPUT POWER
+25
f = 500 MHz
+25
OUTPUT POWER vs. INPUT POWER
f = 500 MHz
V
CC
= 5.0 V
Output Power P
out
(dBm)
Output Power P
out
(dBm)
+20
V
CC
= 5.5 V
V
CC
= 5.0 V
+20
T
A
= +25
°C
T
A
= +85
°C
+15
V
CC
= 4.5 V
+15
T
A
= –45
°C
+10
+10
+5
+5
0
–20
–15
–10
–5
0
+5
+10
0
–20
–15
–10
–5
0
+5
+10
Input Power P
in
(dBm)
Input Power P
in
(dBm)
Third Order Intermodulation Distortion IM
3
(dBc)
Saturated Output Power P
O(sat)
(dBm)
SATURATED OUTPUT POWER vs. FREQUENCY
+25
P
in
= +3 dBm
+20
V
CC
= 5.5 V
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
–60
–50
V
CC
= 5.5 V
–40
V
CC
= 5.0 V
–30
–20
–10
0
–5
V
CC
= 4.5 V
f
1
= 500 MHz
f
2
= 502 MHz
+15
V
CC
= 5.0 V
+10
V
CC
= 4.5 V
+5
0
0.01
0.03
0.1
0.3
1.0
3.0
0
+5
+10
+15
Frequency f (GHz)
Output Power of Each Tone P
O(each)
(dBm)
Data Sheet P12434EJ4V0DS00
5
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