TC7WG00FU/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7WG00FU,TC7WG00FK
Dual 2-Input NAND Gate
TC7WG00FU
Features
•
•
•
•
•
High output current
: ±8 mA (min) at V
CC
= 3 V
Super high speed operation : t
pd
= 2.5 ns (typ.)
at V
CC
= 3.3 V,15pF
Operating voltage range
5.5-V tolerant inputs
3.6-V power down protection outputs
TC7WG00FK
: V
CC
= 0.9 to 3.6 V
(SM8)
Marking
SM8
Product Name
US8
G 00
Lot No.
WG
00
Weight:
SSOP8-P-0.65
SSOP8-P-0.50A
(US8)
: 0.02 g (typ.)
: 0.01 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/GND current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 4.6
−0.5
to 7.0
−0.5
to 4.6
−0.5
to V
CC
+0.5
−20
−20
±25
±50
300 (SM8)
200 (US8)
−65
to 150
(Note 3)
(Note1)
(Note2)
Unit
V
V
Pin Assignment
(top view)
1A
1B
1
2
3
4
8
V
CC
7
6
5
1Y
2B
2A
V
2Y
mA
mA
mA
mA
mW
°C
GND
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V
CC
= 0 V
Note 2: High or Low state. Do not exceed I
OUT
of absolute maximum ratings.
Note 3: V
OUT
< GND
1
2009-07-09
TC7WG00FU/FK
AC Characteristics
(unless otherwise specified, Input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
Test Condition
Ta
=
25°C
V
CC
(V)
0.9
1.1 to 1.3
C
L
=
10 pF,
R
L
=
1 MΩ
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
0.9
1.1 to 1.3
Propagation delay time
t
pLH
t
pHL
C
L
=
15 pF,
R
L
=
1 MΩ
1.4 to 1.6
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
0.9
1.1 to 1.3
C
L
=
30 pF,
R
L
=
1 MΩ
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
Input capacitance
Power dissipation
capacitance
C
IN
C
PD
⎯
(Note 13)
3.6
0.9 to 3.6
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
26.9
10.9
2.9
4.5
2.9
2.2
30.0
12.0
6.5
5.0
3.2
2.5
45.0
18
8.9
6.9
4.4
3.5
3
10
Max
⎯
20.7
9.6
7.0
4.4
3.5
⎯
24.2
10.5
7.7
4.9
3.8
⎯
33.4
14.8
10.3
6.4
4.9
⎯
⎯
Ta
= −40
to 85°C
Min
⎯
1.0
1.0
1.0
1.0
1.0
⎯
1.0
1.0
1.0
1.0
1.0
⎯
1.0
1.0
1.0
1.0
1.0
⎯
⎯
Max
⎯
38.6
11.3
7.5
4.9
4.1
⎯
42.0
12.6
8.0
5.6
4.4
⎯
63.2
17.9
10.8
6.8
5.4
⎯
⎯
pF
pF
ns
Unit
Note 13: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr.)
=
C
PD
½V
CC
½f
IN
+
I
CC
/2
4
2009-07-09
Microcontroller MCU
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