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UPC1677B

Description
1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER
File Size40KB,3 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPC1677B Overview

1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

1.7 GHz MEDIUM POWER
BROADBAND SILICON MMIC AMPLIFIER
FEATURES
• HIGH POWER OUTPUT:
+19.5 dBm
• EXCELLENT FREQUENCY RESPONSE:
1.7 GHz TYP at 3 dB Down
HIGH POWER GAIN:
24 dB TYP at 500 MHz
• SINGLE SUPPLY VOLTAGE:
5 V
40
30
20
UPC1677B*
*For Hi-Rel
Applications Only
INSERTION GAIN vs. FREQUENCY
V
CC
= 5 V
Gain,G
S
(dB)
10
0
-10
-20
-30
DESCRIPTION
The UPC1677 is a silicon monolithic integrated circuit de-
signed as a wide-band amplifier covering the HF to UHF
bands. The device features high output power, 19.5 dBm
typical, high gain, 24 dB typical and operates from a single 5
volt supply. The UPC1677 is available in an 8 lead ceramic flat
package (UPC1677B).
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
-40
100
500
1000
3000
Frequency, f (MHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, V
CC
= 5 V, f = 500 MHz)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
P
SAT
BW
NF
RL
IN
RL
OUT
ISOL
∆G
T
R
TH (J-A)1
R
TH (J-C)
PARAMETERS AND CONDITIONS
Circuit Current (No Input)
Small Signal Gain
Saturated Power
Bandwidth at 3 dB down below the gain at 100 MHz
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain Temperature Coefficient
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
UNITS
mA
dB
dBm
MHz
dB
dB
dB
dB
dB/°C
°C/W
°C/W
29
MIN
63
22
17.5
1500
UPC1677B
B08
TYP
77
24
19.5
1800
6
18
3
34
-0.003
200
50
8
MAX
93
26
Note:
1. Mounted on a 5 cm X 5 cm X .16 mm circuit board.
California Eastern Laboratories

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UPC1677B UPC1677
Description 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER
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