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UPC1675G

Description
GENERAL PURPOSE WIDE BNAD AMPLIFIER
File Size34KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPC1675G Overview

GENERAL PURPOSE WIDE BNAD AMPLIFIER

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC1675G
GENERAL PURPOSE WIDE BNAD AMPLIFIER
DESCRIPTION
The
µ
PC1675G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed
for use as a wide bnad amplifier convers from HF band to UHF band.
FEATURES
• Excellent frequency response : 1.9 GHz TYP.
@ 3 dB down below flat gain.
• High isolation.
• Super small package.
• Uni- and low voltage operation : V
CC
= 5 V
• Input and output matching 50
Ω.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Supply Voltage
Total Power Dissipation
Operating Temperature
Storage Temperature
V
CC
P
T
T
opt
T
stg
6
200
−40
to +85
−55
to +150
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C, V
CC
= 5 V)
CHARACTERISTIC
Circuit Current
Power Gain
Noise Figure
Upper Limit Operating Frequency
Isolation
Input Return Loss
Output Return Loss
Maximum Output Level
SYMBOL
I
CC
G
P
NF
f
u
ISL
RL
in
RL
out
P
O
1.6
21
9
8
2
MIN.
12
10
TYP.
17
12
5.5
1.9
25
12
11
4
MAX.
22
14
7.0
UNIT
mA
dB
dB
GHz
dB
dB
dB
dBm
TEST CONDITIONS
No Signal
f = 0.5 GHz
f = 0.5 GHz
3 dB down below flat gain
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz, P
in
= 0 dBm
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement.
Document No. P12446EJ2V0DS00 (2nd edition)
(Previous No. IC-1890)
Date Published March 1997 N
Printed in Japan
©
1989
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