TYPICAL PERFORMANCE CURVES
APT15GT120BR
APT15GT120BR(G)
APT15GT120BR_SR(G)
APT15GT120SR
APT15GT120SR(G)
1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT
®
The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT
®
offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• High Freq. Switching to 50KHz
• Ultra Low Leakage Current
G
C
®
(B)
TO
-2
47
D
3
PA K
(S)
C
G
E
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT15GT120BR_SR(G)
UNIT
Volts
1200
±30
36
18
45
45A @ 960V
250
-55 to 150
Amps
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 0.6mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125°C)
I
CES
I
GES
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
2
MIN
TYP
MAX
Units
1200
4.5
2.5
5.5
3.0
3.8
100
TBD
052-6266 Rev E 3-2012
6.5
3.6
Volts
μA
nA
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
480
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off )
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off )
t
f
E
on1
E
on2
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
APT15GT120BR_SR(G)
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 15A
T
J
= 150°C, R
G
= 5Ω, V
GE
=
15V, L = 100μH,V
CE
= 960V
Inductive Switching (25°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 15A
4
5
MIN
TYP
MAX
UNIT
1250
100
65
10
105
10
60
45
10
11
85
35
585
800
260
10
11
95
42
590
1440
340
μ
J
ns
ns
A
nC
V
pF
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
R
G
= 5Ω
T
J
= +25°C
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
44
6
μ
J
Inductive Switching (125°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 15A
R
G
= 5Ω
55
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
6
T
J
= +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JC
W
T
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN
TYP
MAX
UNIT
°C/W
gm
.50
N/A
5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
052-6266 Rev E 3-2012
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
45
V
GE
APT15GT120BR_SR(G)
60
15V
50
14V
= 15V
40
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
35
T
J
= -55°C
30
25
T
J
= 25°C
20
15
T
J
= 125°C
10
5
0
0
1
2
3
4
5
6
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25°C)
45
40
I
C
, COLLECTOR CURRENT (A)
35
30
25
20
T
J
= -55°C
15
T
J
= 25°C
10
T
J
= 125°C
5
0
0
2
4
6
8
10
12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
J
= 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
250μs PULSE
TEST<0.5 % DUTY
CYCLE
13V
40
12V
30
11V
20
10V
10
0
9V
8V
7
0
5
10
15
20
25
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 125°C)
30
16
14
12
10
I = 15A
C
T = 25°C
J
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
V
CE
= 240V
V
CE
= 600V
V
CE
=
960V
8
6
4
2
0
0
20
40
60
80
GATE CHARGE (nC)
FIGURE 4, Gate Charge
6
100
120
14
5
I
C
= 30A
4
I
C
= 15A
3
2
I
C
= 7.5A
5
I
C
= 30A
4
I
C
= 15A
3
I
C
= 7.5A
2
1
0
1
0
-50
V
GE
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
10
11
12
13
14
15
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
I
C,
DC COLLECTOR CURRENT(A)
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.00
0.95
0.90
0.85
0.80
0.75
-50
9
0
25
50
75
100 125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
-25
45
40
35
30
25
20
15
10
5
-25
0
-50
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
-25
052-6266 Rev E 3-2012
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
APT15GT120BR_SR(G)
14
12
t
d(ON)
, TURN-ON DELAY TIME (ns)
10
8
6
4
2
0
V
CE
= 600V
T
J
= 25°C
,
T
J
=125°C
R
G
= 5Ω
L = 100 μH
120
V
GE
= 15V
t
d (OFF)
, TURN-OFF DELAY TIME (ns)
100
80
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
60
40
20
V
CE
=
800V
R
G
=
5Ω
L = 100 μH
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
R
G
=
5Ω, L
=
100
μ
H, V
CE
=
800V
5
0
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
R
G
=
5Ω, L
=
100
μ
H, V
CE
=
800V
5
40
35
30
25
20
15
10
5
0
5
45
40
35
t
f,
FALL TIME (ns)
30
25
20
15
10
5
t
r,
RISE TIME (ns)
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
V = 800V
CE
V = +15V
GE
R = 5Ω
0
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
V = 800V
CE
V = +15V
GE
R = 5Ω
G
4000
3500
E
ON2
, TURN ON ENERGY LOSS (μJ)
3000
2500
2000
1500
1000
500
1000
E
OFF
, TURN OFF ENERGY LOSS (μJ)
G
800
T
J
=
125°C
T
J
=
125°C
600
400
200
T
J
=
25°C
T
J
=
25°C
0
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
V = 800V
CE
V = +15V
GE
T = 125°C
J
5
0
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
V = 800V
CE
V = +15V
GE
R = 5Ω
G
5
8000
7000
SWITCHING ENERGY LOSSES (μJ)
6000
5000
4000
3000
2000
1000
0
0
4000
E
on2,
30A
3500
SWITCHING ENERGY LOSSES (μJ)
3000
2500
2000
1500
E
on2,
30A
E
on2,
15A
052-6266 Rev E 3-2012
E
on2,
15A
E
off,
15A
E
on2,
7.5A
E
off,
30A
1000
500
E
on2,
7.5A
E
off,
7.5A
E
off,
30A
E
off,
7.5A
E
off,
15A
0
0
10
20
30
40
50
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
2,000
1,000
500
C, CAPACITANCE ( F)
P
APT15GT120BR_SR(G)
50
C
ies
I
C
, COLLECTOR CURRENT (A)
45
40
35
30
25
20
15
10
5
100
50
C
oes
C
res
10
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
0
0
200 400 600 800 1000 1200 1400
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.60
0.50
Z
θJC
, THERMAL IMPEDANCE (°C/W)
D = 0.9
0.40
0.7
0.30
0.5
0.20
0.3
0.10
0.1
0
10
-5
0.05
10
-4
Note:
P
DM
t1
t2
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak T
J
= P
DM
x Z
θJC + T C
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
400
100
F
MAX
, OPERATING FREQUENCY (kHz)
50
10
5
T = 125
°
C
J
T = 75
°
C
C
D = 50 %
V = 800V
CE
R = 5Ω
G
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
f
max2
=
P
diss
=
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θJC
5
10
15
20
25
30
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
1
0
052-6266 Rev E 3-2012
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