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MJ12002

Description
Power Bipolar Transistor, 2.5A I(C), 1-Element, NPN, Silicon, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size330KB,9 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MJ12002 Overview

Power Bipolar Transistor, 2.5A I(C), 1-Element, NPN, Silicon, Metal, 2 Pin

MJ12002 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
Maximum collector current (IC)2.5 A
ConfigurationSINGLE
Minimum DC current gain (hFE)1.11
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
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