CS20-16io1
Thyristor
V
RRM
I
TAV
V
T
=
=
=
1600 V
20 A
1.23 V
Single Thyristor
Part number
CS20-16io1
Backside: anode
2
3
1
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
TO-247
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
CS20-16io1
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1700
V
1600
20
2
1.27
1.53
1.23
1.57
20
31
0.87
17.3
0.3
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 150 °C
16
10
5
0.5
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
=
t
P
= 200 µs; di
G
/dt = 0.3 A/µs;
I
G
=
0.3 A; V =
⅔
V
DRM
non-repet., I
T
=
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
I
G
=
10 µs
0.3 A; di
G
/dt =
0.3 A/µs
T
VJ
= 25 °C
T
VJ
= 25 °C
0.3 A/µs
150
µs
20 V/µs t
p
= 200 µs
20A; V =
⅔
V
DRM
T
VJ
=125 °C
100
2
mA
µs
60 A
20 A
200
260
280
220
240
340
325
240
240
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
W
W
W
V
R/D
= 1600 V
V
R/D
= 1600 V
I
T
=
I
T
=
I
T
=
I
T
=
20 A
40 A
20 A
40 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 130 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.6 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
1000 V/µs
1.3
1.6
50
80
0.2
5
150
V
V
mA
mA
V
mA
mA
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 125°C
T
VJ
= 25 °C
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
=
0.3 A; di
G
/dt =
V
R
= 100 V; I
T
=
turn-off time
di/dt = 15 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
CS20-16io1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
70
150
125
150
Unit
A
°C
°C
°C
g
Nm
N
6
0.8
20
1.2
120
Product Marking
Logo
Part Number
Date Code
Lot#
Location
IXYS
XXXXXXXXX
yywwZ
1234
Ordering
Standard
Ordering Number
CS20-16io1
Marking on Product
CS20-16io1
Delivery Mode
Tube
Quantity
30
Code No.
466530
Similar Part
CS20-12io1
CS20-14io1
Package
TO-247AD (3)
TO-247AD (3)
Voltage class
1200
1400
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 150°C
V
0 max
R
0 max
0.87
14.8
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
CS20-16io1
Outlines TO-247
E
Q
A
A2
S
D1
D
2x
E2
Ø
P
Ø
P1
D2
Sym.
Inches
min.
max.
Millimeter
min.
max.
4
1
L1
L
2
3
E1
2x
b2
3x
b
C
A1
b4
2x
e
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
-
0.020 0.053
0.530
-
-
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
-
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
-
0.51
1.35
13.45
-
-
7.39
2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
CS20-16io1
Thyristor
60
250
50 Hz, 80% V
RRM
1000
V
R
= 0 V
200
40
T
VJ
= 45°C
T
VJ
= 45°C
I
T
[A]
20
125°C
150°C
0
0,5
T
VJ
= 25°C
1,0
1,5
2,0
I
TSM
150
It
100
2
T
VJ
= 125°C
[A]
T
VJ
= 125°C
100
[A s]
2
50
0,01
0,1
1
10
1
2
2
3
4 5 6 7 8 910
V
T
[V]
Fig. 1 Forward characteristics
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I t versus time (1-10 ms)
10
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
1000
80
dc =
1
0.5
0.4
0.33
0.17
0.08
6
60
100
V
G
1
23
1
4
5
t
gd
[µs]
10
typ.
Limit
I
T(AV)M
40
[V]
[A]
T
VJ
= 125°C
20
0,1
1
10
100
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
1
10
100
1000
0
0
25
50
75
100 125 150
1000
10000
I
G
[mA]
Fig. 4 Gate trigger characteristics
I
G
[mA]
Fig. 5 Gate controlled delay time
T
C
[°C]
Fig. 6 Max. forward current
at case temperature
30
20
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
0,6
Z
thJC
0,4
P
(AV)
[W]
[K/W]
R
thi
[K/W]
t
i
[s]
0.01
0.0001
0.03
0.30
0.11
10
4
0.08
0.06
0.20
0.10
0.16
10
1
10
2
10
3
10
0,2
0
0
10
20
0
50
100
150
0,0
10
0
I
T(AV)
[A]
T
amb
[°C]
t [ms]
Fig. 8 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019 IXYS all rights reserved
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