PRELIMINARY DATA SHEET
µ
PA836TF
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
Silicon Transistor
DESCRIPTION
The
µ
PA836TF has two different built-in transistors (Q1
and Q2) for low noise amplification in the VHF band to UHF
band.
PACKAGE DRAWINGS (Unit:mm)
2.10±0.1
1.25±0.1
0.22
−0.05
+0.1
1
Q2 : NF = 1.7 dB TYP. @f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
• High gain
Q1 :
|S
21e
|
2
= 8.5 dB TYP. @f = 2 GHz, V
CE
= 3 V, I
C
= 10 mA
Q2 :
|S
21e
|
2
= 3.5 dB TYP. @f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
• 2 different transistors on-chip (2SC5193, 2SC4959)
• 6-pin thin-type small mini mold package
0.65
Q1 : NF = 1.5 dB TYP. @f = 2 GHz, V
CE
= 3 V, I
C
= 3 mA
1.30
• Low noise
2.00±0.2
0.65
2
3
0.60±0.1
4
5
6
FEATURES
ON-CHIP TRANSISTORS
Q1
3-pin small mini mold part No.
2SC4959
Q2
2SC5193
PIN CONFIGURATION (Top View)
B1
E2
5
B2
4
Q2
2
E1
3
C2
The
µ
PA833TF features the Q1 and Q2 in inverted positions.
6
Q1
1
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
PACKING STYLE
8-mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2
Emitter), and pin 4 (Q2 Base)
face perforated side of tape.
C1
µ
PA836TF
µ
PA836TF-T1
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
Caution is required concerning excess input, such as from cstati
electricity becaus the high-frequency
,
e
process is used for this device.
The information in this document is subject to change without notice.
Document No. P12728EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
0 to 0.1
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
©
0.13±0.05
V47
0.45
1997
µ
PA836TF
°
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
RATING
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
SYMBOL
Q1
V
CBO
V
CEO
V
EBO
I
C
P
T
9
6
2
30
150 in 1 element
Q2
9
6
2
100
150 in 1 element
V
V
V
mA
mW
UNIT
200 in 2 elements
Note
Junction temperature
Storage temperature
T
j
T
stg
150
−65
to +150
150
°C
°C
Note
(1) Q1
110 mW must not be exceeded for 1 element.
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Feedback capacitance
Insertion power gain
Noise figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 10 mA
Note 1
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
7
75
12
0.4
8.5
1.5
2.5
0.7
MIN.
TYP.
MAX.
0.1
0.1
150
GHz
pF
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
2
µ
PA836TF
(2) Q2
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product (1)
Gain bandwidth product (2)
Feedback capacitance
Insertion power gain (1)
Insertion power gain (2)
Noise figure (1)
Noise figure (2)
SYMBOL
I
CBO
I
EBO
h
FE
f
T
f
T
C
re
|S
21e
|
2
|S
21e
|
2
NF
NF
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 3 mA
Note 1
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
2.5
100
4.0
4.5
9.0
0.75
3.5
6.5
1.7
1.5
2.5
0.85
MIN.
TYP.
MAX.
0.1
0.1
145
GHz
GHz
pF
dB
dB
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
value of Q1
h
FE
value of Q2
FB
V47
75 to 150
100 to 145
3
µ
PA836TF
°
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Q1
Total Power Dissipation vs. Ambient Temperature
Free Air
Q2
Total Power Dissipation vs. Ambient Temperature
Total power dissipation P
T
(mW)
2 elements in total
200
Total power dissipation P
T
(mW)
2 elements in total
200
Free Air
Q1 when using 1 element
Q2 when using 1 element
Q1 when using
2 elements
100
Q2 when using
2 elements
100
0
50
100
150
0
50
100
150
Ambient temperature T
A
(°C)
Ambient temperature T
A
(°C)
Collector Current vs. DC Base Voltage
50
V
CE
= 3 V
Collector current I
C
(mA)
Collector Current vs. DC Base Voltage
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
V
CE
= 1 V
Collector current I
C
(mA)
40
30
20
10
0
0.5
DC base voltage V
BE
(V)
1.0
0
0.5
DC base voltage V
BE
(V)
1
Collector Current vs. Collector to Emitter Voltage
60
500
µ
A
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector Current vs. Collector to Emitter Voltage
30
200
µ
A
180
µ
A
160
µ
A
20
140
µ
A
120
µ
A
100
µ
A
10
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
50
40
30
20
10
400
µ
A
300
µ
A
200
µ
A
I
B
= 100
µ
A
0
1
2
3
4
5
6
Collector to emitter voltage V
CE
(V)
Collector to emitter voltage V
CE
(V)
4
µ
PA836TF
Q1
DC Current Gain vs. Collector Current
200
200
Q2
DC Current Gain vs. Collector Current
V
CE
= 1 V
DC current gain h
FE
5V
V
CE
= 3 V
100
DC current gain h
FE
100
0
0.1 0.2
0.5
1
2
5
10 20
50 100
0
0.1 0.2
0.5
1
2
5
10 20
50 100
Collector current I
C
(mA)
Collector current I
C
(mA)
Gain Bandwidth Product vs. Collector Current
14
Gain bandwidth product f
T
(GHz)
Gain Bandwidth Product vs. Collector Current
10
f = 2 GH
Z
V
CE
= 1 V
f = 2 GHz
5V
3V
Gain bandwidth product f
T
(GHz)
12
10
8
6
4
2
0.5
V
CE
= 1 V
5
0
1
2
5
10
20
50
1
2
3
5
7
10
Collector current I
C
(mA)
Collector current I
C
(mA)
Insertion Power Gain vs. Collector Current
10
f = 2 GHz
Insertion power gain |S
21e
|
2
(dB)
Insertion Power Gain vs. Collector Current
10
f = 2 GH
Z
V
CE
= 1 V
5V
8
3V
V
CE
= 1 V
6
Insertion power gain |S
21e
|
2
(dB)
5
4
2
0.5
2
5
10
20
0
50
1
2
3
5
7
10
Collector current I
C
(mA)
Collector current I
C
(mA)
5
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