DATA SHEET
SILICON TRANSISTOR
µ
PA810T
The
µ
PA810T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
FEATURES
• Low Noise
• High Gain
• A Small Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC4226)
NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
2.0±0.2
|S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
ORDERING INFORMATION
PART NUMBER
QUANTITY
E-
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
20
12
3
100
150 in 1 element
200 in 2 elements
Note
150
–65 to +150
UNIT
V
V
V
mA
mW
T
j
T
stg
˚C
˚C
0.9±0.1
Remark
To order evaluation samples, please contact your nearby sales office
.
AS
PARAMETER
µ
PA810T-T1
Taping products
(3 KPCS/Reel)
PIN CONFIGURATION (Top View)
Part number for sample: µPA810T-A (Unit sample quantity is 50 pcs.)
6
Q
1
1
2
3
5
4
Q
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
PH
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Emitter (Q1)
2. Base (Q2)
6. Base (Q1)
3. Collector (Q2)
Junction Temperature
Storage Temperature
Note
110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. P11463EJ1V0DS00 (1st edition)
Date Published June 1996 P
0 to 0.1
0.15
–0
+0.1
µ
PA810T
Loose products
(50 PCS)
0.7
O
UT
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
1
0.65 0.65
1.3
2
3
4
5
6
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 6-PIN 2
×
2SC4226) SMALL MINI MOLD
0.2
–0
+0.1
XY
µ
PA810T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
h
FE1
/h
FE2
CONDITION
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
Note 1
V
CE
= 3 V, I
C
= 7 mA
70
3.0
4.5
0.7
9
MIN.
TYP.
MAX.
1
1
250
GHz
pF
UNIT
µ
A
µ
A
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
24R
70 to 140
GB
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
P
T
– T
A
Characteristics
Total Power Dissipation P
T
(mW)
AS
2
en
ts
Pe
rE
in
To
lem
ta
en
l
Collector Current I
C
(mA)
200
El
em
t
100
E-
25R
125 to 250
20
V
CE
= 3 V
10
100
150
0
I
B
=
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
20
µ
A
200
DC Current Gain h
FE
PH
25
20
Collector Current I
C
(mA)
0
50
Ambient Temperature T
A
(°C)
I
C
– V
CE
Characteristics
15
10
5
0
5
Collector to Emitter Voltage V
CE
(V)
10
2
O
UT
1.5
7
dB
1.2
2.5
dB
0.85
I
C
– V
BE
Characteristics
0.5
Base to Emitter Voltage V
BE
(V)
h
FE
– I
C
Characteristics
V
CE
= 3 V
100
1.0
50
20
10
0.5
1
5
10
50
Collector Current I
C
(mA)
Microcontroller MCU
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