PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA805T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
• Low Noise, High Gain
• Operable at Low Voltage
• Small Feed-back Capacitance
C
re
= 0.3 pF TYP.
• Built-in 2 Transistors (2
×
2SC4958)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
0.65 0.65
2.0±0.2
1.3
2
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
3
µ
PA805T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
9
6
2
10
60 in 1 element
120 in 2
Junction Temperature
Storage Temperature
T
j
T
stg
elements
Note
150
–65 to +150
˚C
˚C
UNIT
V
V
V
mA
mW
6
Q
1
5
0~0.1
4
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
4. Emitter (Q2)
2. Emitter (Q1)
5. Base (Q2)
3. Collector (Q2)
6. Base (Q1)
Note
110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
Document No. ID-3639
(O.D. No. ID-9146)
Date Published April 1995 P
Printed in Japan
©
0.15
–0
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
0.9±0.1
µ
PA805T
Embossed tape 8 mm wide. Pin 6 (Q1
0.7
4
5
+0.1
0.2
–0
1
6
+0.1
X Y
1995
µ
PA805T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21
|
2
NF
h
FE1
/h
FE2
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 5 mA
Note 1
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
7
75
12
0.3
8.5
2.5
4
0.5
MIN.
TYP.
MAX.
0.1
0.1
150
GHz
pF
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
KB
T82
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
50
Total Power Dissipation P
T
(mW)
Free Air
Collector Current I
C
(mA)
200
40
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
V
CE
= 3 V
30
2 Elements in Total
100
Per Element
120 mW
20
60 mW
10
0
50
100
150
0
0.5
Base to Emitter Voltage V
BE
(V)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
1
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
40
200
Collector Current I
C
(mA)
20
500
µ
A
400
µ
A
300
µ
A
200
µ
A
I
B
= 100
µ
A
DC Current Gain h
FE
30
100
V
CE
= 3 V
5V
10
0
2
4
6
0
0.1
0.5
1
5
10
50 100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
2
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