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UPA677TB

Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size52KB,6 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA677TB Overview

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA677TB
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA677TB is a switching device which can be driven
directly by a 2.5 V power source.
The
µ
PA677TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
1.25 ±0.1
2.1 ±0.1
PACKAGE DRAWING (Unit: mm)
0.2
-0
+0.1
0.15
-0.05
+0.1
6
5
4
0 to 0.1
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 0.57
MAX. (V
GS
= 4.5 V, I
D
= 0.30 A)
R
DS(on)2
= 0.60
MAX. (V
GS
= 4.0 V, I
D
= 0.30 A)
R
DS(on)3
= 0.88
MAX. (V
GS
= 2.5 V, I
D
= 0.15 A)
Two MOS FET circuits in same size package as SC-70
1
2
3
0.7
0.9 ±0.1
0.65
0.65
1.3
2.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-88 (SSP)
µ
PA677TB
Marking: WA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
PIN CONNECTUON (Top View)
20
±12
±0.35
±1.40
0.2
150
−55
to +150
V
V
A
A
W
°C
°C
1
2
3
1:
2:
3:
4:
5:
6:
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
6
5
4
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Total Power Dissipation(2units)
Channel Temperature
Storage Temperature
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2
2.
Mounted on FR-4 Board of 2500 mm x 1.1 mm 2units total.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
= ±200 V TYP. (C = 200 pF, R = 0
, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Caution
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16598EJ1V0DS00 (1st edition)
Date Published March 2003 NS CP(K)
Printed in Japan
2003
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