DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA622TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA622TT is a switching device which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
0.25 ±0.1
2.1 ±0.1
6
5
4
1.6
FEATURES
•
4.0 V drive available
•
Low on-state resistance
R
DS(on)1
= 82 mΩ MAX. (V
GS
= 10 V, I
D
= 1.5 A)
R
DS(on)2
= 120 mΩ MAX. (V
GS
= 4.5 V, I
D
= 1.0 A)
R
DS(on)3
= 139 mΩ MAX. (V
GS
= 4.0 V, I
D
= 1.0 A)
0 to 0.05
1
2
3
0.65
0.65
S
0.15
−0.05
+0.1
0.8 MAX.
ORDERING INFORMATION
PART NUMBER
PACKAGE
6 pin WSOF (1620)
0.4 ±0.1
0.05 S
µ
PA622TT-E1-A
µ
PA622TT-E2-A
1, 2, 5, 6: Drain
3
: Gate
4
: Source
Remark
"-A" indicates Pb-free (This product does not contain Pb
in external electrode and other parts.).
"-E1" or "-E2" indicates the unit orientation.
(8 mm embossed carrier tape, 3000 pcs/reel)
Marking: WC
0.2
−0.05
+0.1
0.1 M S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
GSS
±20
Gate to Source Voltage (V
DS
= 0 V)
Note1
Drain Current (DC)
I
D(DC)
±3.0
Note2
Drain Current (pulse)
I
D(pulse)
±12
0.2
Total Power Dissipation
P
T1
Note1
Total Power Dissipation
P
T2
1.3
150
Channel Temperature
T
ch
–55 to +150
Storage Temperature
T
stg
2
Notes 1.
Mounted on FR-4 board of 5000 mm x 1.1 mm, t
≤
5 sec.
2.
PW
≤
10
µ
s, Duty Cycle
≤
1%
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Body
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16113EJ2V0DS00 (2nd edition)
Date Published May 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
µ
PA622TT
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±16
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 1.5 A
V
GS
= 10 V, I
D
= 1.5 A
V
GS
= 4.5 V, I
D
= 1.0 A
V
GS
= 4.0 V, I
D
= 1.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 15 V, I
D
= 1.5 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
0.5
2.0
2.1
65
90
104
155
45
27
10
28
75
50
2.5
Drain to Source On-state Resistance
82
120
139
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
V
DD
= 24 V
V
GS
= 10 V
I
D
= 3.0 A
I
F
= 3.0 A, V
GS
= 0 V
3.8
0.7
1.3
0.90
Note
Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
D.U.T.
V
GS
0
10%
I
G
= 2 mA
V
GS
90%
R
L
V
DD
V
DD
PG.
90%
90%
10%
10%
50
Ω
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G16113EJ2V0DS
µ
PA622TT
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.6
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
P
T
- Total Power Dissipation - W
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Mounted on FR-4 board of
2
5000 m m x 1.1 m m , t
≤
5 sec.
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS(on)
Limited
(V
GS
= 10 V)
I
D(pulse)
I
D
- Drain Current - A
10
PW = 1 ms
1
I
D(DC)
10
ms
0.1
Single pulse
Mounted on FR-4 board of
2
5000 mm x 1.1 mm
0.1
1
10
100
ms
5s
0.01
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
100
10
Single pulse
Mounted on FR-4 board of
2
5000 mm x 1.1 mm
1
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet G16113EJ2V0DS
3
µ
PA622TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
12
Pulsed
10
V
GS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
10
V
DS
= 10 V
P u ls e d
1
I
D
- Drain Current - A
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
4.0 V
4.5 V
I
D
- Drain Current - A
0 .1
0 .0 1
T
A
= 1 2 5 °C
7 5 °C
2 5 °C
−
2 5 °C
0 .0 0 1
0 .0 0 0 1
1
1 .5
2
2 .5
3
3 .5
4
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
2.4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
V
D S
= 10 V
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1.0 m A
2.2
1
T
A
=
−25°C
25°C
75°C
125°C
0.1
2
1.8
1.6
1.4
-50
0
50
100
150
0.01
0.01
0.1
1
10
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
200
Pulsed
150
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
Pulsed
150
V
GS
= 4.0 V, I
D
= 1.0 A
V
GS
= 4.5 V, I
D
= 1.0 A
100
100
I
D
= 1.5 A
50
50
V
G S
= 10 V, I
D
= 1.5 A
0
-50
0
50
100
150
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
T
ch
- Channel Temperature - °C
4
Data Sheet G16113EJ2V0DS
µ
PA622TT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
V
GS
= 10 V
Pulsed
150
T
A
= 125°C
100
75°C
25°C
−
25°C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
V
GS
= 4.5 V
Pulsed
150
T
A
= 125°C
75°C
100
25°C
−
25°C
50
50
0
0.01
0.1
1
10
100
0
0.01
0.1
1
10
100
I
D
- Drain Current - A
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
1000
V
G S
= 4.0 V
Pulsed
150
T
A
= 125°C
75°C
25°C
100
−
25°C
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
t
d ( o f f)
t
f
t
r
t
d (o n )
100
10
50
0
0.01
1
0.1
1
10
100
0 .1
1
10
I
D
- Drain Current - A
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
V
GS
= 0 V
f = 1 .0 M H z
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
P ulse d
C
iss
, C
oss
, C
rss
- Capacitance - pF
I
F
- Diode Forward Current - A
10
V
GS
= 0 V
1
C
is s
100
0.1
C
oss
C
rs s
10
0 .1
1
10
100
0 .0 1
0 .4
0 .6
0.8
1
1.2
1.4
V
DS
- Drain to Source Voltage - V
V
F(S-D)
- Source to Drain Voltage - V
Data Sheet G16113EJ2V0DS
5
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