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UPA611TA

Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
File Size47KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA611TA Overview

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA611TA
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The
µ
PA611TA is a switching device which can be driven directly by a
2.5-V power source.
The
µ
PA611TA has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
PACKAGE DRAWING (Unit : mm)
0.65
+0.1
–0.15
0.32
+0.1
–0.05
0.16
+0.1
–0.06
2.8 ±0.2
1.5
0 to 0.1
FEATURES
Can be driven by a 2.5-V power source
Low gate cut-off voltage
0.95 0.95
1.9
2.9 ±0.2
0.8
1.1 to 1.4
ORDERING INFORMATION
PART NUMBER
PACKAGE
EQUIVALENT CIRCUIT
(1/2 Circuit)
µ
PA611TA
Drain
SC-74 (Mini Mold)
Internal
Diode
Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±20
±0.1
±0.4
300
(TOTAL)
150
–55 to +150
V
V
A
A
mW
°C
°C
Gate
Protection
Diode
Source
PIN CONNECTION (Top View)
6
5
4
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
6. Drain 1
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
10
µ
s, Duty Cycle
1 %
1
2
3
Marking : IB
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D11707EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
©
1999
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