TRIAC, 200V V(DRM), 4A I(T)RMS
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Tag Semiconductors Ltd. |
| package instruction | , |
| Reach Compliance Code | unknown |
| Critical rise rate of minimum off-state voltage | 30 V/us |
| Maximum DC gate trigger current | 5 mA |
| Maximum DC gate trigger voltage | 2 V |
| Maximum holding current | 10 mA |
| JESD-609 code | e0 |
| Maximum leakage current | 0.2 mA |
| Maximum on-state voltage | 1.8 V |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Maximum rms on-state current | 4 A |
| Off-state repetitive peak voltage | 200 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Trigger device type | TRIAC |
